Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

D.J. Wentink, P. Dawson, G.T. Foxon

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Abstract

We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off‐cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.
Original languageEnglish
Pages (from-to)1261-1263
Number of pages3
JournalApplied physics letters
Volume63
Issue number9
DOIs
Publication statusPublished - 1993

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