Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

D.J. Wentink; P. Dawson; G.T. Foxon

doi:10.1063/1.109762

Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

D.J. Wentink
, P. Dawson
, G.T. Foxon

Research output: Contribution to journal › Article › Academic › peer-review

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229 Downloads (Pure)

Abstract

We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off‐cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.

Original language	English
Pages (from-to)	1261-1263
Number of pages	3
Journal	Applied physics letters
Volume	63
Issue number	9
DOIs	https://doi.org/10.1063/1.109762
Publication status	Published - 1993

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title = "Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates",

abstract = "We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off‐cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.",

author = "D.J. Wentink and P. Dawson and G.T. Foxon",

year = "1993",

doi = "10.1063/1.109762",

language = "English",

volume = "63",

pages = "1261--1263",

journal = "Applied physics letters",

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publisher = "American Institute of Physics",

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T1 - Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

AU - Wentink, D.J.

AU - Dawson, P.

AU - Foxon, G.T.

PY - 1993

Y1 - 1993

N2 - We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off‐cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.

AB - We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off‐cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.

U2 - 10.1063/1.109762

DO - 10.1063/1.109762

M3 - Article

SN - 0003-6951

VL - 63

SP - 1261

EP - 1263

JO - Applied physics letters

JF - Applied physics letters

IS - 9

ER -

Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

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