Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor

R. Ramaneti; J.C. Lodder; R. Jansen

doi:10.1063/1.2751133

Anomalous Hall effect in anatase Co:TiO₂ ferromagnetic semiconductor

R. Ramaneti, J.C. Lodder, R. Jansen

Research output: Contribution to journal › Article › Academic › peer-review

37 Citations (Scopus)

89 Downloads (Pure)

Abstract

The observation of the anomalous Hall effect (AHE) in Co-doped TiO₂ ferromagnetic semiconductor in the anatase phase is reported. An AHE is observed with magnetic hysteresis consistent with remanence and coercivity obtained from magnetometry data. The anatase films also have reasonable mobility (∼17cm²/Vs) at room temperature and carrier density of ∼5×10¹⁸cm⁻³. The AHE in such films with relatively low carrier density gives prospects to test whether the ferromagnetism in this oxide semiconductor is carrier mediated using a field effect device configuration.

Original language	English
Article number	012502
Number of pages	3
Journal	Applied physics letters
Volume	91
Issue number	1
DOIs	https://doi.org/10.1063/1.2751133
Publication status	Published - 2 Jul 2007

Access to Document

10.1063/1.2751133

Ramaneti2007anomalousFinal published version, 330 KB

Cite this

@article{cc80a2aa3a8d4a15bb9cc09dcf0394b8,

title = "Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor",

abstract = "The observation of the anomalous Hall effect (AHE) in Co-doped TiO2 ferromagnetic semiconductor in the anatase phase is reported. An AHE is observed with magnetic hysteresis consistent with remanence and coercivity obtained from magnetometry data. The anatase films also have reasonable mobility (∼17cm2/Vs) at room temperature and carrier density of ∼5×1018cm−3. The AHE in such films with relatively low carrier density gives prospects to test whether the ferromagnetism in this oxide semiconductor is carrier mediated using a field effect device configuration.",

author = "R. Ramaneti and J.C. Lodder and R. Jansen",

year = "2007",

month = jul,

day = "2",

doi = "10.1063/1.2751133",

language = "English",

volume = "91",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor

AU - Ramaneti, R.

AU - Lodder, J.C.

AU - Jansen, R.

PY - 2007/7/2

Y1 - 2007/7/2

N2 - The observation of the anomalous Hall effect (AHE) in Co-doped TiO2 ferromagnetic semiconductor in the anatase phase is reported. An AHE is observed with magnetic hysteresis consistent with remanence and coercivity obtained from magnetometry data. The anatase films also have reasonable mobility (∼17cm2/Vs) at room temperature and carrier density of ∼5×1018cm−3. The AHE in such films with relatively low carrier density gives prospects to test whether the ferromagnetism in this oxide semiconductor is carrier mediated using a field effect device configuration.

AB - The observation of the anomalous Hall effect (AHE) in Co-doped TiO2 ferromagnetic semiconductor in the anatase phase is reported. An AHE is observed with magnetic hysteresis consistent with remanence and coercivity obtained from magnetometry data. The anatase films also have reasonable mobility (∼17cm2/Vs) at room temperature and carrier density of ∼5×1018cm−3. The AHE in such films with relatively low carrier density gives prospects to test whether the ferromagnetism in this oxide semiconductor is carrier mediated using a field effect device configuration.

U2 - 10.1063/1.2751133

DO - 10.1063/1.2751133

M3 - Article

SN - 0003-6951

VL - 91

JO - Applied physics letters

JF - Applied physics letters

IS - 1

M1 - 012502

ER -

Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor

Abstract

Access to Document

Fingerprint

Cite this

Anomalous Hall effect in anatase Co:TiO₂ ferromagnetic semiconductor