Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor

R. Ramaneti, J.C. Lodder, R. Jansen

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    Abstract

    The observation of the anomalous Hall effect (AHE) in Co-doped TiO2 ferromagnetic semiconductor in the anatase phase is reported. An AHE is observed with magnetic hysteresis consistent with remanence and coercivity obtained from magnetometry data. The anatase films also have reasonable mobility (∼17cm2/Vs) at room temperature and carrier density of ∼5×1018cm−3. The AHE in such films with relatively low carrier density gives prospects to test whether the ferromagnetism in this oxide semiconductor is carrier mediated using a field effect device configuration.
    Original languageEnglish
    Article number012502
    Number of pages3
    JournalApplied physics letters
    Volume91
    Issue number1
    DOIs
    Publication statusPublished - 2 Jul 2007

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