Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

Y.J. Lee, M.P. de Jong, W.G. van der Wiel, Y. Kim, J.D. Brock

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Abstract

We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.
Original languageEnglish
Pages (from-to)2125061-2125063
Number of pages3
JournalApplied physics letters
Volume97
Issue number21
DOIs
Publication statusPublished - 24 Nov 2010

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anatase
Hall effect
insertion
buffers
retarding
electrical resistivity
room temperature

Keywords

  • Strontium compounds
  • Titanium compounds
  • Semiconductor epitaxial layers
  • Semiconductor growth
  • Semiconductor-insulator boundaries
  • Semimagnetic semiconductors
  • Buffer layers
  • Cobalt
  • Hall effect
  • Semiconductor materials
  • Electrical resistivity

Cite this

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title = "Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer",
abstract = "We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. {\%} Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.",
keywords = "Strontium compounds, Titanium compounds, Semiconductor epitaxial layers, Semiconductor growth, Semiconductor-insulator boundaries, Semimagnetic semiconductors, Buffer layers, Cobalt, Hall effect, Semiconductor materials, Electrical resistivity",
author = "Y.J. Lee and {de Jong}, M.P. and {van der Wiel}, W.G. and Y. Kim and J.D. Brock",
year = "2010",
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day = "24",
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volume = "97",
pages = "2125061--2125063",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
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Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer. / Lee, Y.J.; de Jong, M.P.; van der Wiel, W.G.; Kim, Y.; Brock, J.D.

In: Applied physics letters, Vol. 97, No. 21, 24.11.2010, p. 2125061-2125063.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

AU - Lee, Y.J.

AU - de Jong, M.P.

AU - van der Wiel, W.G.

AU - Kim, Y.

AU - Brock, J.D.

PY - 2010/11/24

Y1 - 2010/11/24

N2 - We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.

AB - We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.

KW - Strontium compounds

KW - Titanium compounds

KW - Semiconductor epitaxial layers

KW - Semiconductor growth

KW - Semiconductor-insulator boundaries

KW - Semimagnetic semiconductors

KW - Buffer layers

KW - Cobalt

KW - Hall effect

KW - Semiconductor materials

KW - Electrical resistivity

U2 - 10.1063/1.3521286

DO - 10.1063/1.3521286

M3 - Article

VL - 97

SP - 2125061

EP - 2125063

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 21

ER -