Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

Y.J. Lee, M.P. de Jong, W.G. van der Wiel, Y. Kim, J.D. Brock

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    Abstract

    We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.
    Original languageEnglish
    Pages (from-to)2125061-2125063
    Number of pages3
    JournalApplied physics letters
    Volume97
    Issue number21
    DOIs
    Publication statusPublished - 24 Nov 2010

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    anatase
    Hall effect
    insertion
    buffers
    retarding
    electrical resistivity
    room temperature

    Keywords

    • Strontium compounds
    • Titanium compounds
    • Semiconductor epitaxial layers
    • Semiconductor growth
    • Semiconductor-insulator boundaries
    • Semimagnetic semiconductors
    • Buffer layers
    • Cobalt
    • Hall effect
    • Semiconductor materials
    • Electrical resistivity

    Cite this

    @article{ebef0cb1051b416fb9357c04e035744c,
    title = "Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer",
    abstract = "We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. {\%} Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.",
    keywords = "Strontium compounds, Titanium compounds, Semiconductor epitaxial layers, Semiconductor growth, Semiconductor-insulator boundaries, Semimagnetic semiconductors, Buffer layers, Cobalt, Hall effect, Semiconductor materials, Electrical resistivity",
    author = "Y.J. Lee and {de Jong}, M.P. and {van der Wiel}, W.G. and Y. Kim and J.D. Brock",
    year = "2010",
    month = "11",
    day = "24",
    doi = "10.1063/1.3521286",
    language = "English",
    volume = "97",
    pages = "2125061--2125063",
    journal = "Applied physics letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics",
    number = "21",

    }

    Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer. / Lee, Y.J.; de Jong, M.P.; van der Wiel, W.G.; Kim, Y.; Brock, J.D.

    In: Applied physics letters, Vol. 97, No. 21, 24.11.2010, p. 2125061-2125063.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

    AU - Lee, Y.J.

    AU - de Jong, M.P.

    AU - van der Wiel, W.G.

    AU - Kim, Y.

    AU - Brock, J.D.

    PY - 2010/11/24

    Y1 - 2010/11/24

    N2 - We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.

    AB - We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.

    KW - Strontium compounds

    KW - Titanium compounds

    KW - Semiconductor epitaxial layers

    KW - Semiconductor growth

    KW - Semiconductor-insulator boundaries

    KW - Semimagnetic semiconductors

    KW - Buffer layers

    KW - Cobalt

    KW - Hall effect

    KW - Semiconductor materials

    KW - Electrical resistivity

    U2 - 10.1063/1.3521286

    DO - 10.1063/1.3521286

    M3 - Article

    VL - 97

    SP - 2125061

    EP - 2125063

    JO - Applied physics letters

    JF - Applied physics letters

    SN - 0003-6951

    IS - 21

    ER -