Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

Y.J. Lee, M.P. de Jong, W.G. van der Wiel, Y. Kim, J.D. Brock

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    We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co clusters, and a different depth distribution of such clusters. Co clusters in Co:TiO2 with a buffer layer are mostly formed at the surface, such that they are situated outside the current path and cannot contribute to the transverse anomalous Hall resistivity. These results indicate extrinsic origins of magnetism in anatase Co:TiO2.
    Original languageEnglish
    Pages (from-to)2125061-2125063
    Number of pages3
    JournalApplied physics letters
    Issue number21
    Publication statusPublished - 24 Nov 2010


    • Strontium compounds
    • Titanium compounds
    • Semiconductor epitaxial layers
    • Semiconductor growth
    • Semiconductor-insulator boundaries
    • Semimagnetic semiconductors
    • Buffer layers
    • Cobalt
    • Hall effect
    • Semiconductor materials
    • Electrical resistivity

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