Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material

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Abstract

We investigate the operation of FETs with a high-K channel material, SrTiO3, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO3 devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ \mathrm{m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.

Original languageEnglish
Title of host publication2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
Place of PublicationPiscataway, NJ
PublisherIEEE
ISBN (Electronic)978-1-7281-4008-7
ISBN (Print)978-1-7281-4009-4
DOIs
Publication statusPublished - May 2020
Event33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 - Online, Edinburgh, United Kingdom
Duration: 4 May 202018 May 2020
Conference number: 33

Publication series

NameIEEE International Conference on Microelectronic Test Structures
PublisherIEEE
Volume2020
ISSN (Print)1071-9032
ISSN (Electronic)2158-1029

Conference

Conference33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020
Abbreviated titleICMTS 2020
CountryUnited Kingdom
CityEdinburgh
Period4/05/2018/05/20

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