Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material

Alexander E.M. Smink; Maurits J. de Jong; Hans Hilgenkamp; Wilfred G. Van Der Wiel; Jurriaan Schmitz

doi:10.1109/ICMTS48187.2020.9107901

Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material

Alexander E.M. Smink, Maurits J. de Jong, Hans Hilgenkamp, Wilfred G. Van Der Wiel, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

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Abstract

We investigate the operation of FETs with a high-K channel material, SrTiO₃, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO₃ devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ \mathrm{m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.

Original language	English
Title of host publication	2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	978-1-7281-4008-7
ISBN (Print)	978-1-7281-4009-4
DOIs	https://doi.org/10.1109/ICMTS48187.2020.9107901
Publication status	Published - May 2020
Event	33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 - Online, Edinburgh, United Kingdom Duration: 4 May 2020 → 18 May 2020 Conference number: 33

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Publisher	IEEE
Volume	2020
ISSN (Print)	1071-9032
ISSN (Electronic)	2158-1029

Conference

Conference	33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020
Abbreviated title	ICMTS 2020
Country/Territory	United Kingdom
City	Edinburgh
Period	4/05/20 → 18/05/20

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10.1109/ICMTS48187.2020.9107901

Smink2020anomalousFinal published version, 192 KBLicence: Taverne

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Smink, A. E. M., de Jong, M. J., Hilgenkamp, H., Van Der Wiel, W. G., & Schmitz, J. (2020). Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material. In 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Article 9107901 (IEEE International Conference on Microelectronic Test Structures; Vol. 2020). IEEE. https://doi.org/10.1109/ICMTS48187.2020.9107901

@inproceedings{71a97e551b2443db87fc0b57779e0448,

title = "Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material",

abstract = "We investigate the operation of FETs with a high-K channel material, SrTiO3, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO3 devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ \mathrm{m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.",

author = "Smink, {Alexander E.M.} and {de Jong}, {Maurits J.} and Hans Hilgenkamp and {Van Der Wiel}, {Wilfred G.} and Jurriaan Schmitz",

year = "2020",

month = may,

doi = "10.1109/ICMTS48187.2020.9107901",

language = "English",

isbn = "978-1-7281-4009-4",

series = "IEEE International Conference on Microelectronic Test Structures",

publisher = "IEEE",

booktitle = "2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)",

address = "United States",

note = "33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020, ICMTS 2020 ; Conference date: 04-05-2020 Through 18-05-2020",

}

Smink, AEM, de Jong, MJ, Hilgenkamp, H , Van Der Wiel, WG & Schmitz, J 2020, Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material. in 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)., 9107901, IEEE International Conference on Microelectronic Test Structures, vol. 2020, IEEE, Piscataway, NJ, 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020, Edinburgh, United Kingdom, 4/05/20. https://doi.org/10.1109/ICMTS48187.2020.9107901

Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material. / Smink, Alexander E.M.; de Jong, Maurits J.; Hilgenkamp, Hans et al.
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ: IEEE, 2020. 9107901 (IEEE International Conference on Microelectronic Test Structures; Vol. 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material

AU - Smink, Alexander E.M.

AU - de Jong, Maurits J.

AU - Hilgenkamp, Hans

AU - Van Der Wiel, Wilfred G.

AU - Schmitz, Jurriaan

N1 - Conference code: 33

PY - 2020/5

Y1 - 2020/5

N2 - We investigate the operation of FETs with a high-K channel material, SrTiO3, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO3 devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ \mathrm{m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.

AB - We investigate the operation of FETs with a high-K channel material, SrTiO3, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO3 devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ \mathrm{m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.

UR - http://www.scopus.com/inward/record.url?scp=85086444082&partnerID=8YFLogxK

U2 - 10.1109/ICMTS48187.2020.9107901

DO - 10.1109/ICMTS48187.2020.9107901

M3 - Conference contribution

AN - SCOPUS:85086444082

SN - 978-1-7281-4009-4

T3 - IEEE International Conference on Microelectronic Test Structures

BT - 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)

PB - IEEE

CY - Piscataway, NJ

T2 - 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020

Y2 - 4 May 2020 through 18 May 2020

ER -

Smink AEM, de Jong MJ, Hilgenkamp H , Van Der Wiel WG , Schmitz J. Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material. In 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ: IEEE. 2020. 9107901. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS48187.2020.9107901

Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material

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