Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

T. Lohner; M.A. El-Sherbiny; N.Q. Khánh; M. Fried; H. Wormeester; J. Gyulai

doi:10.1016/B978-0-444-82334-2.50153-2

Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

T. Lohner, M.A. El-Sherbiny, N.Q. Khánh, M. Fried, H. Wormeester, J. Gyulai

Physics of Interfaces and Nanomaterials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been examined using a multilayer optical model. This unexpected disorder is far from the projected range and it is not predicted by TRIM calculation. Ion implantations were performed in the range of 200-800 keV. For the analysis of ellipsometric data we used the method of assuming an optical model, applying effective medium approximation and fitting the model parameters (layer thicknesses and volume fractions of amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the damaged surface layer on the implantation parameters was determined. A comparison was made between spectroscopic ellipsometry and multipleangle-
of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independently
checked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.

Original language	English
Title of host publication	Ion Beam Modification of Materials
Subtitle of host publication	Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995
Editors	J.S. Williams, R.G. Elliman, M.C. Ridgway
Place of Publication	Canberra, Australia
Publisher	Elsevier Science
Pages	797-801
Number of pages	5
ISBN (Print)	0-444-82334-4
DOIs	https://doi.org/10.1016/B978-0-444-82334-2.50153-2
Publication status	Published - 5 Feb 1996
Event	9th International Conference on Ion Beam Modification of Materials 1995 - Canberra, Australia Duration: 5 Feb 1995 → 10 May 1995 Conference number: 9

Conference

Conference	9th International Conference on Ion Beam Modification of Materials 1995
Country/Territory	Australia
City	Canberra
Period	5/02/95 → 10/05/95

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10.1016/B978-0-444-82334-2.50153-2

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Lohner, T., El-Sherbiny, M. A., Khánh, N. Q., Fried, M., Wormeester, H., & Gyulai, J. (1996). Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS. In J. S. Williams, R. G. Elliman, & M. C. Ridgway (Eds.), Ion Beam Modification of Materials: Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995 (pp. 797-801). Elsevier Science. https://doi.org/10.1016/B978-0-444-82334-2.50153-2

Lohner, T. ; El-Sherbiny, M.A. ; Khánh, N.Q. ; Fried, M. ; Wormeester, H. ; Gyulai, J. / Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS. Ion Beam Modification of Materials: Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995. editor / J.S. Williams ; R.G. Elliman ; M.C. Ridgway. Canberra, Australia : Elsevier Science, 1996. pp. 797-801

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title = "Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS",

abstract = "The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been examined using a multilayer optical model. This unexpected disorder is far from the projected range and it is not predicted by TRIM calculation. Ion implantations were performed in the range of 200-800 keV. For the analysis of ellipsometric data we used the method of assuming an optical model, applying effective medium approximation and fitting the model parameters (layer thicknesses and volume fractions of amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the damaged surface layer on the implantation parameters was determined. A comparison was made between spectroscopic ellipsometry and multipleangle-of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independentlychecked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.",

author = "T. Lohner and M.A. El-Sherbiny and N.Q. Kh{\'a}nh and M. Fried and H. Wormeester and J. Gyulai",

year = "1996",

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Lohner, T, El-Sherbiny, MA, Khánh, NQ, Fried, M, Wormeester, H & Gyulai, J 1996, Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS. in JS Williams, RG Elliman & MC Ridgway (eds), Ion Beam Modification of Materials: Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995. Elsevier Science, Canberra, Australia, pp. 797-801, 9th International Conference on Ion Beam Modification of Materials 1995, Canberra, Australian Capital Territory, Australia, 5/02/95. https://doi.org/10.1016/B978-0-444-82334-2.50153-2

Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS. / Lohner, T.; El-Sherbiny, M.A.; Khánh, N.Q.; Fried, M.; Wormeester, H.; Gyulai, J.

Ion Beam Modification of Materials: Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995. ed. / J.S. Williams; R.G. Elliman; M.C. Ridgway. Canberra, Australia : Elsevier Science, 1996. p. 797-801.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

AU - Lohner, T.

AU - El-Sherbiny, M.A.

AU - Khánh, N.Q.

AU - Fried, M.

AU - Wormeester, H.

AU - Gyulai, J.

N1 - Conference code: 9

PY - 1996/2/5

Y1 - 1996/2/5

N2 - The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been examined using a multilayer optical model. This unexpected disorder is far from the projected range and it is not predicted by TRIM calculation. Ion implantations were performed in the range of 200-800 keV. For the analysis of ellipsometric data we used the method of assuming an optical model, applying effective medium approximation and fitting the model parameters (layer thicknesses and volume fractions of amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the damaged surface layer on the implantation parameters was determined. A comparison was made between spectroscopic ellipsometry and multipleangle-of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independentlychecked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.

AB - The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been examined using a multilayer optical model. This unexpected disorder is far from the projected range and it is not predicted by TRIM calculation. Ion implantations were performed in the range of 200-800 keV. For the analysis of ellipsometric data we used the method of assuming an optical model, applying effective medium approximation and fitting the model parameters (layer thicknesses and volume fractions of amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the damaged surface layer on the implantation parameters was determined. A comparison was made between spectroscopic ellipsometry and multipleangle-of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independentlychecked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.

U2 - 10.1016/B978-0-444-82334-2.50153-2

DO - 10.1016/B978-0-444-82334-2.50153-2

M3 - Conference contribution

SN - 0-444-82334-4

SP - 797

EP - 801

BT - Ion Beam Modification of Materials

A2 - Williams, J.S.

A2 - Elliman, R.G.

A2 - Ridgway, M.C.

PB - Elsevier Science

CY - Canberra, Australia

T2 - 9th International Conference on Ion Beam Modification of Materials 1995

Y2 - 5 February 1995 through 10 May 1995

ER -

Lohner T, El-Sherbiny MA, Khánh NQ, Fried M, Wormeester H, Gyulai J. Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS. In Williams JS, Elliman RG, Ridgway MC, editors, Ion Beam Modification of Materials: Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995. Canberra, Australia: Elsevier Science. 1996. p. 797-801 https://doi.org/10.1016/B978-0-444-82334-2.50153-2

Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

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