Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

T. Lohner, M.A. El-Sherbiny, N.Q. Khánh, M. Fried, H. Wormeester, J. Gyulai

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Abstract

The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been examined using a multilayer optical model. This unexpected disorder is far from the projected range and it is not predicted by TRIM calculation. Ion implantations were performed in the range of 200-800 keV. For the analysis of ellipsometric data we used the method of assuming an optical model, applying effective medium approximation and fitting the model parameters (layer thicknesses and volume fractions of amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the damaged surface layer on the implantation parameters was determined. A comparison was made between spectroscopic ellipsometry and multipleangle-
of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independently
checked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.
Original languageEnglish
Title of host publicationNinth International Conference on Ion Beam Modification of Materials
Subtitle of host publicationBook of Abstracts
Place of PublicationCanberra, Australia
Publication statusPublished - 1995
Event9th International Conference on Ion Beam Modification of Materials 1995 - Canberra, Australia
Duration: 5 Feb 199510 May 1995
Conference number: 9

Conference

Conference9th International Conference on Ion Beam Modification of Materials 1995
CountryAustralia
CityCanberra
Period5/02/9510/05/95

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