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Abstract
The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been examined using a multilayer optical model. This unexpected disorder is far from the projected range and it is not predicted by TRIM calculation. Ion implantations were performed in the range of 200-800 keV. For the analysis of ellipsometric data we used the method of assuming an optical model, applying effective medium approximation and fitting the model parameters (layer thicknesses and volume fractions of amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the damaged surface layer on the implantation parameters was determined. A comparison was made between spectroscopic ellipsometry and multipleangle-
of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independently
checked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.
of-incidence single wavelength ellipsometry to check their capability to investigate surface damage. The optical model construction was independently
checked by Rutherford Backscattering Spectrometry. A tentative model is outlined explaining the formation of anomalous surface disorder.
| Original language | English |
|---|---|
| Title of host publication | Ninth International Conference on Ion Beam Modification of Materials |
| Subtitle of host publication | Book of Abstracts |
| Place of Publication | Canberra, Australia |
| Publication status | Published - 1995 |
| Event | 9th International Conference on Ion Beam Modification of Materials 1995 - Canberra, Australia Duration: 5 Feb 1995 → 10 May 1995 Conference number: 9 |
Conference
| Conference | 9th International Conference on Ion Beam Modification of Materials 1995 |
|---|---|
| Country/Territory | Australia |
| City | Canberra |
| Period | 5/02/95 → 10/05/95 |
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Dive into the research topics of 'Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS'. Together they form a unique fingerprint.Research output
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Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS
Lohner, T., El-Sherbiny, M. A., Khánh, N. Q., Fried, M., Wormeester, H. & Gyulai, J., 5 Feb 1996, Ion Beam Modification of Materials: Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February 1995. Williams, J. S., Elliman, R. G. & Ridgway, M. C. (eds.). Canberra, Australia: Elsevier, p. 797-801 5 p.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review