Abstract
A novel carrier-confinement structure is proposed and realized to generate light in a silicon diode. A significant enhancement of the external power efficiency is observed compared to reference silicon diodes on SOI.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 573-575 |
| Number of pages | 3 |
| ISBN (Print) | 978-90-73461-56-7 |
| Publication status | Published - 27 Nov 2008 |
| Event | 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
| Number | WoTUG-31 |
Workshop
| Workshop | 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 |
|---|---|
| Abbreviated title | SAFE |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 27/11/08 → 28/11/08 |
Keywords
- SC-SBLE: Silicon-based Light Emitters
- METIS-255001
- IR-62610
- EWI-14610