Antiphase boundary network: A route to extract the island nucleation density

E. Zoethout, P.W. van den Hoogenhof, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)


Epitaxial growth of Si or Ge on Si(001) and Ge(001) surfaces leads to the formation of an antiphase boundary network because adjacent (2×1) reconstructed islands can either be in-phase or out-of-phase with each other. We show that this antiphase boundary network can be used to extract the saturation island nucleation density well after the onset of coalescence. This method is more accurate than the commonly used method of counting the islands in the low coverage regime
Original languageUndefined
Pages (from-to)5785-5787
Number of pages3
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2002


  • METIS-206887
  • IR-73078

Cite this