Antiphase boundary network: A route to extract the island nucleation density

E. Zoethout, P.W. van den Hoogenhof, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

Epitaxial growth of Si or Ge on Si(001) and Ge(001) surfaces leads to the formation of an antiphase boundary network because adjacent (2×1) reconstructed islands can either be in-phase or out-of-phase with each other. We show that this antiphase boundary network can be used to extract the saturation island nucleation density well after the onset of coalescence. This method is more accurate than the commonly used method of counting the islands in the low coverage regime
Original languageUndefined
Pages (from-to)5785-5787
Number of pages3
JournalJournal of applied physics
Volume92
Issue number10
DOIs
Publication statusPublished - 2002

Keywords

  • METIS-206887
  • IR-73078

Cite this

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abstract = "Epitaxial growth of Si or Ge on Si(001) and Ge(001) surfaces leads to the formation of an antiphase boundary network because adjacent (2×1) reconstructed islands can either be in-phase or out-of-phase with each other. We show that this antiphase boundary network can be used to extract the saturation island nucleation density well after the onset of coalescence. This method is more accurate than the commonly used method of counting the islands in the low coverage regime",
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author = "E. Zoethout and {van den Hoogenhof}, P.W. and Zandvliet, {Henricus J.W.} and Bene Poelsema",
year = "2002",
doi = "10.1063/1.1509846",
language = "Undefined",
volume = "92",
pages = "5785--5787",
journal = "Journal of applied physics",
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publisher = "American Institute of Physics",
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Antiphase boundary network: A route to extract the island nucleation density. / Zoethout, E.; van den Hoogenhof, P.W.; Zandvliet, Henricus J.W.; Poelsema, Bene.

In: Journal of applied physics, Vol. 92, No. 10, 2002, p. 5785-5787.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Antiphase boundary network: A route to extract the island nucleation density

AU - Zoethout, E.

AU - van den Hoogenhof, P.W.

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

PY - 2002

Y1 - 2002

N2 - Epitaxial growth of Si or Ge on Si(001) and Ge(001) surfaces leads to the formation of an antiphase boundary network because adjacent (2×1) reconstructed islands can either be in-phase or out-of-phase with each other. We show that this antiphase boundary network can be used to extract the saturation island nucleation density well after the onset of coalescence. This method is more accurate than the commonly used method of counting the islands in the low coverage regime

AB - Epitaxial growth of Si or Ge on Si(001) and Ge(001) surfaces leads to the formation of an antiphase boundary network because adjacent (2×1) reconstructed islands can either be in-phase or out-of-phase with each other. We show that this antiphase boundary network can be used to extract the saturation island nucleation density well after the onset of coalescence. This method is more accurate than the commonly used method of counting the islands in the low coverage regime

KW - METIS-206887

KW - IR-73078

U2 - 10.1063/1.1509846

DO - 10.1063/1.1509846

M3 - Article

VL - 92

SP - 5785

EP - 5787

JO - Journal of applied physics

JF - Journal of applied physics

SN - 0021-8979

IS - 10

ER -