Abstract
Epitaxial growth of Si or Ge on Si(001) and Ge(001) surfaces leads to the formation of an antiphase boundary network because adjacent (2×1) reconstructed islands can either be in-phase or out-of-phase with each other. We show that this antiphase boundary network can be used to extract the saturation island nucleation density well after the onset of coalescence. This method is more accurate than the commonly used method of counting the islands in the low coverage regime
Original language | Undefined |
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Pages (from-to) | 5785-5787 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 92 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2002 |
Keywords
- METIS-206887
- IR-73078