In this paper, we will discuss the extendibility of the charge-pumping (CP) technique toward frequencies up to 4 GHz. Such high frequencies are attractive when a significant gate leakage current flows, obscuring the CP current at lower pumping frequencies. It is shown that using RF gate excitation, accurate CP curves can be obtained on MOS devices with a leakage current density exceeding 1 A•cm−2 . A theoretical analysis of the trap response to RF gate voltage signals is presented, giving a clear insight on the benefits and limitations of the technique.
|Number of pages||9|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - Mar 2008|
- SC-ICRY: Integrated Circuit Reliability and Yield
- trap response
- charge pumping (CP)