Application and evaluation of the RF charge-pumping technique

G.T. Sasse, Jurriaan Schmitz

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    Abstract

    In this paper, we will discuss the extendibility of the charge-pumping (CP) technique toward frequencies up to 4 GHz. Such high frequencies are attractive when a significant gate leakage current flows, obscuring the CP current at lower pumping frequencies. It is shown that using RF gate excitation, accurate CP curves can be obtained on MOS devices with a leakage current density exceeding 1 A•cm−2 . A theoretical analysis of the trap response to RF gate voltage signals is presented, giving a clear insight on the benefits and limitations of the technique.
    Original languageUndefined
    Pages (from-to)881-889
    Number of pages9
    JournalIEEE Transactions on Electron Devices
    Volume55
    Issue number3
    DOIs
    Publication statusPublished - Mar 2008

    Keywords

    • EWI-12046
    • SC-ICRY: Integrated Circuit Reliability and Yield
    • METIS-250891
    • IR-64659
    • CMOS
    • trap response
    • Dielectrics
    • Tunneling
    • RF
    • charge pumping (CP)
    • Characterization

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