Application of highly uniform LPCVD SiOxNy in SHG devices

K. Wörhoff, P.V. Lambeck, H. Albers, O.F.J. Noordman, N.F. van Hulst, Th.J.A. Popma

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Abstract

Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .
Original languageEnglish
Title of host publicationProceedings 1996 IEEE/LEOS Symposium - Benelux Chapter
EditorsA. Driessen, R.M. de Ridder
Place of PublicationEnschede
PublisherUniversity of Twente
Pages226-229
ISBN (Print)90-365-0902-5
Publication statusPublished - 28 Nov 1996
EventIEEE/LEOS Symposium Benelux Chapter 1996 - University of Twente, Enschede, Netherlands
Duration: 28 Nov 199628 Nov 1996

Conference

ConferenceIEEE/LEOS Symposium Benelux Chapter 1996
CountryNetherlands
CityEnschede
Period28/11/9628/11/96

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    Wörhoff, K., Lambeck, P. V., Albers, H., Noordman, O. F. J., van Hulst, N. F., & Popma, T. J. A. (1996). Application of highly uniform LPCVD SiOxNy in SHG devices. In A. Driessen, & R. M. de Ridder (Eds.), Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter (pp. 226-229). Enschede: University of Twente.