Application of highly uniform LPCVD SiOxNy in SHG devices

K. Wörhoff, P.V. Lambeck, H. Albers, O.F.J. Noordman, N.F. van Hulst, Th.J.A. Popma

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .
Original languageEnglish
Title of host publicationProceedings 1996 IEEE/LEOS Symposium - Benelux Chapter
EditorsA. Driessen, R.M. de Ridder
Place of PublicationEnschede
PublisherUniversity of Twente
Pages226-229
ISBN (Print)90-365-0902-5
Publication statusPublished - 28 Nov 1996
EventIEEE/LEOS Symposium Benelux Chapter 1996 - University of Twente, Enschede, Netherlands
Duration: 28 Nov 199628 Nov 1996

Conference

ConferenceIEEE/LEOS Symposium Benelux Chapter 1996
CountryNetherlands
CityEnschede
Period28/11/9628/11/96

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oxynitrides
low pressure
vapor deposition
refractivity
waveguides
harmonics
silicon

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Wörhoff, K., Lambeck, P. V., Albers, H., Noordman, O. F. J., van Hulst, N. F., & Popma, T. J. A. (1996). Application of highly uniform LPCVD SiOxNy in SHG devices. In A. Driessen, & R. M. de Ridder (Eds.), Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter (pp. 226-229). Enschede: University of Twente.
Wörhoff, K. ; Lambeck, P.V. ; Albers, H. ; Noordman, O.F.J. ; van Hulst, N.F. ; Popma, Th.J.A. / Application of highly uniform LPCVD SiOxNy in SHG devices. Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter. editor / A. Driessen ; R.M. de Ridder. Enschede : University of Twente, 1996. pp. 226-229
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title = "Application of highly uniform LPCVD SiOxNy in SHG devices",
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author = "K. W{\"o}rhoff and P.V. Lambeck and H. Albers and O.F.J. Noordman and {van Hulst}, N.F. and Th.J.A. Popma",
year = "1996",
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Wörhoff, K, Lambeck, PV, Albers, H, Noordman, OFJ, van Hulst, NF & Popma, TJA 1996, Application of highly uniform LPCVD SiOxNy in SHG devices. in A Driessen & RM de Ridder (eds), Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter. University of Twente, Enschede, pp. 226-229, IEEE/LEOS Symposium Benelux Chapter 1996, Enschede, Netherlands, 28/11/96.

Application of highly uniform LPCVD SiOxNy in SHG devices. / Wörhoff, K.; Lambeck, P.V.; Albers, H.; Noordman, O.F.J.; van Hulst, N.F.; Popma, Th.J.A.

Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter. ed. / A. Driessen; R.M. de Ridder. Enschede : University of Twente, 1996. p. 226-229.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Application of highly uniform LPCVD SiOxNy in SHG devices

AU - Wörhoff, K.

AU - Lambeck, P.V.

AU - Albers, H.

AU - Noordman, O.F.J.

AU - van Hulst, N.F.

AU - Popma, Th.J.A.

PY - 1996/11/28

Y1 - 1996/11/28

N2 - Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .

AB - Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .

M3 - Conference contribution

SN - 90-365-0902-5

SP - 226

EP - 229

BT - Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter

A2 - Driessen, A.

A2 - de Ridder, R.M.

PB - University of Twente

CY - Enschede

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Wörhoff K, Lambeck PV, Albers H, Noordman OFJ, van Hulst NF, Popma TJA. Application of highly uniform LPCVD SiOxNy in SHG devices. In Driessen A, de Ridder RM, editors, Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter. Enschede: University of Twente. 1996. p. 226-229