Application of highly uniform LPCVD SiOxNy in SHG devices

K. Wörhoff; P.V. Lambeck; H. Albers; O.F.J. Noordman; N.F. van Hulst; Th.J.A. Popma

Application of highly uniform LPCVD SiOxNy in SHG devices

K. Wörhoff, P.V. Lambeck, H. Albers, O.F.J. Noordman, N.F. van Hulst, Th.J.A. Popma

Optical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

24 Downloads (Pure)

Abstract

Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .

Original language	English
Title of host publication	Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter
Editors	A. Driessen, R.M. de Ridder
Place of Publication	Enschede
Publisher	University of Twente
Pages	226-229
ISBN (Print)	90-365-0902-5
Publication status	Published - 28 Nov 1996
Event	IEEE/LEOS Symposium Benelux Chapter 1996 - University of Twente, Enschede, Netherlands Duration: 28 Nov 1996 → 28 Nov 1996

Conference

Conference	IEEE/LEOS Symposium Benelux Chapter 1996
Country/Territory	Netherlands
City	Enschede
Period	28/11/96 → 28/11/96

Access to Document

Wörhoff1996applicationFinal published version, 195 KB

Cite this

@inproceedings{62b471d9845a41559acb2edeae6d7515,

title = "Application of highly uniform LPCVD SiOxNy in SHG devices",

abstract = "Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .",

author = "K. W{\"o}rhoff and P.V. Lambeck and H. Albers and O.F.J. Noordman and {van Hulst}, N.F. and Th.J.A. Popma",

year = "1996",

month = nov,

day = "28",

language = "English",

isbn = "90-365-0902-5",

pages = "226--229",

editor = "A. Driessen and {de Ridder}, R.M.",

booktitle = "Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter",

publisher = "University of Twente",

address = "Netherlands",

note = "IEEE/LEOS Symposium Benelux Chapter 1996 ; Conference date: 28-11-1996 Through 28-11-1996",

}

TY - GEN

T1 - Application of highly uniform LPCVD SiOxNy in SHG devices

AU - Wörhoff, K.

AU - Lambeck, P.V.

AU - Albers, H.

AU - Noordman, O.F.J.

AU - van Hulst, N.F.

AU - Popma, Th.J.A.

PY - 1996/11/28

Y1 - 1996/11/28

N2 - Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .

AB - Silicon oxynitride layers grown by Low Pressure Chemical Vapor Deposition have been optimized towards high uniformity in thickness and refractive index. These layers have been applied as passive waveguides in phase-matched second-harmonic generating devices .

M3 - Conference contribution

SN - 90-365-0902-5

SP - 226

EP - 229

BT - Proceedings 1996 IEEE/LEOS Symposium - Benelux Chapter

A2 - Driessen, A.

A2 - de Ridder, R.M.

PB - University of Twente

CY - Enschede

T2 - IEEE/LEOS Symposium Benelux Chapter 1996

Y2 - 28 November 1996 through 28 November 1996

ER -

Application of highly uniform LPCVD SiOxNy in SHG devices

Abstract

Conference

Access to Document

Fingerprint

Cite this