Application of laser annealing in the EU FP6 project D-DotFET

L. K. Nanver, V. Jovanović, C. Biasotto, J. Van Der Cingel, S. Milosavljević

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Full-melt high-power excimer laser annealing is investigated as a means of activating implanted source/drain regions in a MISFET structure, which could be positioned on a SiGe dot in such a manner that strain is transferred to the channel region. Such a "DotFET" device is the focus of the EU FP6 project D-DotFET. A MISFET structure fabricated at suitably low processing temperatures, below 400 °C, is demonstrated with a metal/high-k gate-stack that is self-aligned to laser-annealed S/D regions.

Original languageEnglish
Title of host publication17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event2009 17th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2009 - Albany, United States
Duration: 29 Sep 20092 Oct 2009

Conference

Conference2009 17th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
Abbreviated titleRTP 2009
CountryUnited States
CityAlbany
Period29/09/092/10/09

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