Applications of PureB and PureGaB ultrashallow junction technologies

L. K. Nanver, A. Sammak, A. Sakic, V. Mohammadi, J. Derakhshandeh, K. R.C. Mok, L. Qi, N. Golshani, T. M.L. Scholtes, W. B. De Boer

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p+-region in p +n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p+-region in p+n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 29 Oct 20121 Nov 2012
Conference number: 11

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Abbreviated titleICSICT 2012
CountryChina
CityXi'an
Period29/10/121/11/12

Fingerprint

Diodes
Doping (additives)
Detectors
Varactors
Gallium
Photodiodes
Boron
Transistors
Vacuum
Infrared radiation
Fabrication
Wavelength
Electrons
Networks (circuits)

Cite this

Nanver, L. K., Sammak, A., Sakic, A., Mohammadi, V., Derakhshandeh, J., Mok, K. R. C., ... De Boer, W. B. (2012). Applications of PureB and PureGaB ultrashallow junction technologies. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings [6467697] https://doi.org/10.1109/ICSICT.2012.6467697
Nanver, L. K. ; Sammak, A. ; Sakic, A. ; Mohammadi, V. ; Derakhshandeh, J. ; Mok, K. R.C. ; Qi, L. ; Golshani, N. ; Scholtes, T. M.L. ; De Boer, W. B. / Applications of PureB and PureGaB ultrashallow junction technologies. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012.
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abstract = "A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p+-region in p +n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p+-region in p+n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.",
author = "Nanver, {L. K.} and A. Sammak and A. Sakic and V. Mohammadi and J. Derakhshandeh and Mok, {K. R.C.} and L. Qi and N. Golshani and Scholtes, {T. M.L.} and {De Boer}, {W. B.}",
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Nanver, LK, Sammak, A, Sakic, A, Mohammadi, V, Derakhshandeh, J, Mok, KRC, Qi, L, Golshani, N, Scholtes, TML & De Boer, WB 2012, Applications of PureB and PureGaB ultrashallow junction technologies. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467697, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467697

Applications of PureB and PureGaB ultrashallow junction technologies. / Nanver, L. K.; Sammak, A.; Sakic, A.; Mohammadi, V.; Derakhshandeh, J.; Mok, K. R.C.; Qi, L.; Golshani, N.; Scholtes, T. M.L.; De Boer, W. B.

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467697.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Nanver LK, Sammak A, Sakic A, Mohammadi V, Derakhshandeh J, Mok KRC et al. Applications of PureB and PureGaB ultrashallow junction technologies. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467697 https://doi.org/10.1109/ICSICT.2012.6467697