Applications of PureB and PureGaB ultrashallow junction technologies

L.K. Nanver; A. Sammak; A. Sakic; V. Mohammadi; J. Derakhshandeh; K.R.C. Mok; L. Qi; N. Golshani; T.M.L. Scholtes; W.B. de Boer

doi:10.1109/ICSICT.2012.6467697

Applications of PureB and PureGaB ultrashallow junction technologies

L.K. Nanver^*, A. Sammak, A. Sakic, V. Mohammadi, J. Derakhshandeh, K.R.C. Mok, L. Qi, N. Golshani, T.M.L. Scholtes, W.B. de Boer

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p⁺-region in p ⁺n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p⁺-region in p⁺n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467697
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012 Conference number: 11

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Abbreviated title	ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

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10.1109/ICSICT.2012.6467697

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Nanver, L. K., Sammak, A., Sakic, A., Mohammadi, V., Derakhshandeh, J., Mok, K. R. C., Qi, L., Golshani, N., Scholtes, T. M. L., & de Boer, W. B. (2012). Applications of PureB and PureGaB ultrashallow junction technologies. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467697 https://doi.org/10.1109/ICSICT.2012.6467697

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title = "Applications of PureB and PureGaB ultrashallow junction technologies",

abstract = "A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p+-region in p +n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p+-region in p+n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.",

author = "L.K. Nanver and A. Sammak and A. Sakic and V. Mohammadi and J. Derakhshandeh and K.R.C. Mok and L. Qi and N. Golshani and T.M.L. Scholtes and {de Boer}, W.B.",

year = "2012",

month = dec,

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doi = "10.1109/ICSICT.2012.6467697",

language = "English",

isbn = "9781467324724",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Nanver, LK, Sammak, A, Sakic, A, Mohammadi, V, Derakhshandeh, J, Mok, KRC, Qi, L, Golshani, N, Scholtes, TML & de Boer, WB 2012, Applications of PureB and PureGaB ultrashallow junction technologies. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467697, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467697

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AU - Nanver, L.K.

AU - Sammak, A.

AU - Sakic, A.

AU - Mohammadi, V.

AU - Derakhshandeh, J.

AU - Mok, K.R.C.

AU - Qi, L.

AU - Golshani, N.

AU - Scholtes, T.M.L.

AU - de Boer, W.B.

N1 - Conference code: 11

PY - 2012/12/1

Y1 - 2012/12/1

N2 - A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p+-region in p +n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p+-region in p+n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.

AB - A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p+-region in p +n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p+-region in p+n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.

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BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Applications of PureB and PureGaB ultrashallow junction technologies

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