Applications of PureB and PureGaB ultrashallow junction technologies

L. K. Nanver*, A. Sammak, A. Sakic, V. Mohammadi, J. Derakhshandeh, K. R.C. Mok, L. Qi, N. Golshani, T. M.L. Scholtes, W. B. De Boer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

A review is given of present and potential applications of pure dopant deposition of boron and gallium integrated as the p+-region in p +n ultrashallow junctions. Pure B (PureB) layers have been applied in several large area Si diode applications where nm-shallow junctions are required: high-linearity, high-quality varactor diodes for RF adaptive circuits and photodiode detectors for low-penetration-depth beams such as extreme/ vacuum/deep-ultraviolet (EUV, VUV, DUV) light and low-energy electrons. The integration of these types of detectors in CMOS is discussed along with some points that may make the pure dopant depositions attractive for source/drain fabrication in advanced pMOS transistors. Pure Ga capped with pure B (PureGaB) layers have been demonstrated as the p+-region in p+n Ge-on-Si diodes that are sensitive to infrared wavelengths (> 1 μm) both in avalanche and Geiger mode.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 29 Oct 20121 Nov 2012
Conference number: 11

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Abbreviated titleICSICT 2012
CountryChina
CityXi'an
Period29/10/121/11/12

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