Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

Gianpaolo Lorito*, Lin Qi, Lis Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from Schottky-diodes to pn-diode behavior is observed in the measured I-V output characteristics, indicating that the junction depth can be close to zero.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages972-974
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China
Duration: 1 Nov 20104 Nov 2010
Conference number: 10

Conference

Conference10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
CountryChina
CityShanghai
Period1/11/104/11/10

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