Abstract
Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from Schottky-diodes to pn-diode behavior is observed in the measured I-V output characteristics, indicating that the junction depth can be close to zero.
Original language | English |
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Title of host publication | ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings |
Pages | 972-974 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 1 Dec 2010 |
Externally published | Yes |
Event | 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 10 |
Conference
Conference | 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 |
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Country/Territory | China |
City | Shanghai |
Period | 1/11/10 → 4/11/10 |