Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

Gianpaolo Lorito; Lin Qi; Lis Nanver

doi:10.1109/ICSICT.2010.5667505

Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

Gianpaolo Lorito^*
, Lin Qi
, Lis Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from Schottky-diodes to pn-diode behavior is observed in the measured I-V output characteristics, indicating that the junction depth can be close to zero.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	972-974
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667505
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 10

Conference

Conference	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

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10.1109/ICSICT.2010.5667505

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title = "Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing",

abstract = "Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from Schottky-diodes to pn-diode behavior is observed in the measured I-V output characteristics, indicating that the junction depth can be close to zero.",

author = "Gianpaolo Lorito and Lin Qi and Lis Nanver",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667505",

language = "English",

isbn = "9781424457984",

pages = "972--974",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

}

Lorito, G, Qi, L & Nanver, L 2010, Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667505, pp. 972-974, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667505

Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing. / Lorito, Gianpaolo; Qi, Lin; Nanver, Lis.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 972-974 5667505.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

AU - Lorito, Gianpaolo

AU - Qi, Lin

AU - Nanver, Lis

N1 - Conference code: 10

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from Schottky-diodes to pn-diode behavior is observed in the measured I-V output characteristics, indicating that the junction depth can be close to zero.

AB - Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from Schottky-diodes to pn-diode behavior is observed in the measured I-V output characteristics, indicating that the junction depth can be close to zero.

UR - https://www.scopus.com/pages/publications/78751491686

U2 - 10.1109/ICSICT.2010.5667505

DO - 10.1109/ICSICT.2010.5667505

M3 - Conference contribution

AN - SCOPUS:78751491686

SN - 9781424457984

SP - 972

EP - 974

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010

Y2 - 1 November 2010 through 4 November 2010

ER -

Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

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