Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

Bernhard Y. van der Wel*, Kees van der Zouw, Antonius A.I. Aarnink, Alexey Y. Kovalgin

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
37 Downloads (Pure)

Abstract

This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH3 at a substrate temperature of 623 K, polycrystalline AlN was selectively formed on a thin layer of sputtered AlN that was patterned on thermal SiO2 grown on Si substrates. A pretreatment to remove native AlOxNy facilitated the selective growth of ALD-AlN. Transmission electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and atomic force microscopy examined the interfaces and layer thickness. As reported in this article, the deposition of AlN exhibits intrinsic selectivity, a trait that can be exploited to grow other III-nitrides selectively, such as GaN.

Original languageEnglish
Pages (from-to)17134-17145
Number of pages12
JournalJournal of Physical Chemistry C
Volume127
Issue number34
DOIs
Publication statusPublished - 17 Aug 2023

Keywords

  • UT-Hybrid-D

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