Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Agata Sakic*, Tom L.M. Scholtes, Wiebe De Boer, Negin Golshani, Jaber Derakhshandeh, Lis K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
11 Downloads (Pure)


An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011cm-3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017cm-3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90Ω series resistance for a 7.6 mm2 anode area.

Original languageEnglish
Pages (from-to)2092-2107
Number of pages16
Issue number12
Publication statusPublished - 1 Dec 2011
Externally publishedYes


  • Arsenic auto-doping
  • Arsenic segregation
  • Charged-particle detection
  • Diode capacitance
  • High-resistivity epi-layers
  • Photodiodes
  • Silicon epitaxy


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