Arsenic-spike epilayer technology applied to bipolar transistors

W. D. Van Noort; L. K. Nanver; J. W. Slotboom

doi:10.1109/16.960374

Arsenic-spike epilayer technology applied to bipolar transistors

W. D. Van Noort^*, L. K. Nanver, J. W. Slotboom

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such that the collector-base junction of the BJT is formed within the arsenic spike. The counterdoping of boron out-diffusion by arsenic strongly reduces the basewidth. The portion of the spike that is not counterdoped increases the total amount of n-type doping in the collector without reducing BV_ceo. The increased collector-doping allows a 60% higher collector current prior to f_T fall-off. Arsenic has a low diffusivity so very few constraints are put on the thermal budget of the final process. This high flexibility makes the presented epilayer technology a promising candidate to enhance a bipolar process significantly.

Original language	English
Pages (from-to)	2500-2505
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	11
DOIs	https://doi.org/10.1109/16.960374
Publication status	Published - 1 Nov 2001
Externally published	Yes

Keywords

Bipolar transistors
Semiconductor device doping
Semiconductor epitaxial layers

Access to Document

10.1109/16.960374

Cite this

@article{251b9d985c4d42d3a2c6a27b18b8eb12,

title = "Arsenic-spike epilayer technology applied to bipolar transistors",

abstract = "For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such that the collector-base junction of the BJT is formed within the arsenic spike. The counterdoping of boron out-diffusion by arsenic strongly reduces the basewidth. The portion of the spike that is not counterdoped increases the total amount of n-type doping in the collector without reducing BVceo. The increased collector-doping allows a 60% higher collector current prior to fT fall-off. Arsenic has a low diffusivity so very few constraints are put on the thermal budget of the final process. This high flexibility makes the presented epilayer technology a promising candidate to enhance a bipolar process significantly.",

keywords = "Bipolar transistors, Semiconductor device doping, Semiconductor epitaxial layers",

author = "{Van Noort}, {W. D.} and Nanver, {L. K.} and Slotboom, {J. W.}",

year = "2001",

month = nov,

day = "1",

doi = "10.1109/16.960374",

language = "English",

volume = "48",

pages = "2500--2505",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "11",

}

TY - JOUR

T1 - Arsenic-spike epilayer technology applied to bipolar transistors

AU - Van Noort, W. D.

AU - Nanver, L. K.

AU - Slotboom, J. W.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such that the collector-base junction of the BJT is formed within the arsenic spike. The counterdoping of boron out-diffusion by arsenic strongly reduces the basewidth. The portion of the spike that is not counterdoped increases the total amount of n-type doping in the collector without reducing BVceo. The increased collector-doping allows a 60% higher collector current prior to fT fall-off. Arsenic has a low diffusivity so very few constraints are put on the thermal budget of the final process. This high flexibility makes the presented epilayer technology a promising candidate to enhance a bipolar process significantly.

AB - For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such that the collector-base junction of the BJT is formed within the arsenic spike. The counterdoping of boron out-diffusion by arsenic strongly reduces the basewidth. The portion of the spike that is not counterdoped increases the total amount of n-type doping in the collector without reducing BVceo. The increased collector-doping allows a 60% higher collector current prior to fT fall-off. Arsenic has a low diffusivity so very few constraints are put on the thermal budget of the final process. This high flexibility makes the presented epilayer technology a promising candidate to enhance a bipolar process significantly.

KW - Bipolar transistors

KW - Semiconductor device doping

KW - Semiconductor epitaxial layers

UR - http://www.scopus.com/inward/record.url?scp=0035505512&partnerID=8YFLogxK

U2 - 10.1109/16.960374

DO - 10.1109/16.960374

M3 - Article

AN - SCOPUS:0035505512

VL - 48

SP - 2500

EP - 2505

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -

Arsenic-spike epilayer technology applied to bipolar transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this