Arsenic-spike epilayer technology applied to bipolar transistors

W. D. Van Noort*, L. K. Nanver, J. W. Slotboom

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such that the collector-base junction of the BJT is formed within the arsenic spike. The counterdoping of boron out-diffusion by arsenic strongly reduces the basewidth. The portion of the spike that is not counterdoped increases the total amount of n-type doping in the collector without reducing BVceo. The increased collector-doping allows a 60% higher collector current prior to fT fall-off. Arsenic has a low diffusivity so very few constraints are put on the thermal budget of the final process. This high flexibility makes the presented epilayer technology a promising candidate to enhance a bipolar process significantly.

Original languageEnglish
Pages (from-to)2500-2505
Number of pages6
JournalIEEE transactions on electron devices
Volume48
Issue number11
DOIs
Publication statusPublished - 1 Nov 2001
Externally publishedYes

Keywords

  • Bipolar transistors
  • Semiconductor device doping
  • Semiconductor epitaxial layers

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