Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits

Yuan Li; David Donnet; Andrzej Grzegorczyk; Jan Cavelaars; F.G. Kuper

doi:10.1109/IRPS.2010.5488742

Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits

Yuan Li, David Donnet, Andrzej Grzegorczyk, Jan Cavelaars, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

140 Downloads (Pure)

Abstract

The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.

Original language	English
Title of host publication	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Subtitle of host publication	Anaheim, California, USA, 2 - 6 May 2010
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	724-730
Number of pages	7
ISBN (Electronic)	978-1-4244-5429-7, 978-1-4244-5431-0
ISBN (Print)	978-1-4244-5430-3
DOIs	https://doi.org/10.1109/IRPS.2010.5488742
Publication status	Published - 2 May 2010
Event	48th Annual IEEE International Reliability Physics Symposium, IRPS 2010 - Hyatt Regency Orange County Garden Grove, Anaheim, United States Duration: 2 May 2010 → 6 May 2010 Conference number: 48

Publication series

Name	Proceedings IEEE International Reliability Physics Symposium
Publisher	IEEE
Volume	2010
ISSN (Print)	1541-7026
ISSN (Electronic)	1938-1891

Conference

Conference	48th Annual IEEE International Reliability Physics Symposium, IRPS 2010
Abbreviated title	IRPS
Country/Territory	United States
City	Anaheim
Period	2/05/10 → 6/05/10

Keywords

Electromigration
SiCr
Design rules
Integrated resistor
Joule heating

Access to Document

10.1109/IRPS.2010.5488742

Cite this

Li, Y., Donnet, D., Grzegorczyk, A., Cavelaars, J., & Kuper, F. G. (2010). Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010 (pp. 724-730). (Proceedings IEEE International Reliability Physics Symposium; Vol. 2010). IEEE. https://doi.org/10.1109/IRPS.2010.5488742

Li, Yuan ; Donnet, David ; Grzegorczyk, Andrzej et al. / Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Piscataway, NJ : IEEE, 2010. pp. 724-730 (Proceedings IEEE International Reliability Physics Symposium).

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title = "Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits",

abstract = "The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.",

keywords = "Electromigration, SiCr, Design rules, Integrated resistor, Joule heating",

author = "Yuan Li and David Donnet and Andrzej Grzegorczyk and Jan Cavelaars and F.G. Kuper",

year = "2010",

month = may,

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doi = "10.1109/IRPS.2010.5488742",

language = "English",

isbn = "978-1-4244-5430-3",

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Li, Y, Donnet, D, Grzegorczyk, A, Cavelaars, J & Kuper, FG 2010, Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. in 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Proceedings IEEE International Reliability Physics Symposium, vol. 2010, IEEE, Piscataway, NJ, pp. 724-730, 48th Annual IEEE International Reliability Physics Symposium, IRPS 2010, Anaheim, California, United States, 2/05/10. https://doi.org/10.1109/IRPS.2010.5488742

Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. / Li, Yuan; Donnet, David; Grzegorczyk, Andrzej et al.
2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Piscataway, NJ: IEEE, 2010. p. 724-730 (Proceedings IEEE International Reliability Physics Symposium; Vol. 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Li, Yuan

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AU - Kuper, F.G.

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N2 - The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.

AB - The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.

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PB - IEEE

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Li Y, Donnet D, Grzegorczyk A, Cavelaars J, Kuper FG. Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Piscataway, NJ: IEEE. 2010. p. 724-730. (Proceedings IEEE International Reliability Physics Symposium). doi: 10.1109/IRPS.2010.5488742

Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits

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