Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits

Yuan Li, David Donnet, Andrzej Grzegorczyk, Jan Cavelaars, F.G. Kuper

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    Abstract

    The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.
    Original languageEnglish
    Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
    Subtitle of host publicationAnaheim, California, USA, 2 - 6 May 2010
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society Press
    Pages724-730
    Number of pages7
    ISBN (Electronic)978-1-4244-5429-7, 978-1-4244-5431-0
    ISBN (Print)978-1-4244-5430-3
    DOIs
    Publication statusPublished - 2 May 2010
    Event48th Annual IEEE International Reliability Physics Symposium, IRPS 2010 - Hyatt Regency Orange County Garden Grove, Anaheim, United States
    Duration: 2 May 20106 May 2010
    Conference number: 48

    Publication series

    NameProceedings IEEE International Reliability Physics Symposium
    PublisherIEEE
    Volume2010
    ISSN (Print)1541-7026
    ISSN (Electronic)1938-1891

    Conference

    Conference48th Annual IEEE International Reliability Physics Symposium, IRPS 2010
    Abbreviated titleIRPS
    CountryUnited States
    CityAnaheim
    Period2/05/106/05/10

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    Keywords

    • Electromigration
    • SiCr
    • Design rules
    • Integrated resistor
    • Joule heating

    Cite this

    Li, Y., Donnet, D., Grzegorczyk, A., Cavelaars, J., & Kuper, F. G. (2010). Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010 (pp. 724-730). (Proceedings IEEE International Reliability Physics Symposium; Vol. 2010). Piscataway, NJ: IEEE Computer Society Press. https://doi.org/10.1109/IRPS.2010.5488742