Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits

Yuan Li, David Donnet, Andrzej Grzegorczyk, Jan Cavelaars, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
48 Downloads (Pure)

Abstract

The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.
Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Subtitle of host publicationAnaheim, California, USA, 2 - 6 May 2010
Place of PublicationPiscataway, NJ
PublisherIEEE Computer Society Press
Pages724-730
Number of pages7
ISBN (Electronic)978-1-4244-5429-7, 978-1-4244-5431-0
ISBN (Print)978-1-4244-5430-3
DOIs
Publication statusPublished - 2 May 2010
Event48th Annual IEEE International Reliability Physics Symposium, IRPS 2010 - Hyatt Regency Orange County Garden Grove, Anaheim, United States
Duration: 2 May 20106 May 2010
Conference number: 48

Publication series

NameProceedings IEEE International Reliability Physics Symposium
PublisherIEEE
Volume2010
ISSN (Print)1541-7026
ISSN (Electronic)1938-1891

Conference

Conference48th Annual IEEE International Reliability Physics Symposium, IRPS 2010
Abbreviated titleIRPS
CountryUnited States
CityAnaheim
Period2/05/106/05/10

Fingerprint

Resistors
Joule heating
Integrated circuits
Electromigration
Degradation
Thin films
Temperature
Infrared imaging
Temperature sensors
Extrapolation
Failure modes
Current density
Activation energy
Inspection
Transmission electron microscopy
Scanning electron microscopy

Keywords

  • Electromigration
  • SiCr
  • Design rules
  • Integrated resistor
  • Joule heating

Cite this

Li, Y., Donnet, D., Grzegorczyk, A., Cavelaars, J., & Kuper, F. G. (2010). Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010 (pp. 724-730). (Proceedings IEEE International Reliability Physics Symposium; Vol. 2010). Piscataway, NJ: IEEE Computer Society Press. https://doi.org/10.1109/IRPS.2010.5488742
Li, Yuan ; Donnet, David ; Grzegorczyk, Andrzej ; Cavelaars, Jan ; Kuper, F.G. / Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Piscataway, NJ : IEEE Computer Society Press, 2010. pp. 724-730 (Proceedings IEEE International Reliability Physics Symposium).
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abstract = "The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.",
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Li, Y, Donnet, D, Grzegorczyk, A, Cavelaars, J & Kuper, FG 2010, Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. in 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Proceedings IEEE International Reliability Physics Symposium, vol. 2010, IEEE Computer Society Press, Piscataway, NJ, pp. 724-730, 48th Annual IEEE International Reliability Physics Symposium, IRPS 2010, Anaheim, United States, 2/05/10. https://doi.org/10.1109/IRPS.2010.5488742

Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. / Li, Yuan; Donnet, David; Grzegorczyk, Andrzej; Cavelaars, Jan; Kuper, F.G.

2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Piscataway, NJ : IEEE Computer Society Press, 2010. p. 724-730 (Proceedings IEEE International Reliability Physics Symposium; Vol. 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AB - The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different conditions (temperature, current density and direction), followed by optical inspections, Infra-Red imaging and SEM/TEM cross-sections. Electromigration (EM) is found to be the dominating degradation mechanism, but the EM process differs from that in commonly used interconnects. Current accelerating factor and the equivalent activation energy are determined for data extrapolation. To avoid errors in Joule-heating determination from TCR, integrated temperature sensors are employed. Current limitation design rules are deduced based on the EM and Joule heating results.

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Li Y, Donnet D, Grzegorczyk A, Cavelaars J, Kuper FG. Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010: Anaheim, California, USA, 2 - 6 May 2010. Piscataway, NJ: IEEE Computer Society Press. 2010. p. 724-730. (Proceedings IEEE International Reliability Physics Symposium). https://doi.org/10.1109/IRPS.2010.5488742