Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensor

Baibhav K. Mund; Olena Soroka; Jacobus M. Sturm; Wesley T.E. van den Beld; Chris J. Lee; Fred Bijkerk

doi:10.1116/1.5110213

Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensor

Baibhav K. Mund
, Olena Soroka
, Jacobus M. Sturm^*
, Wesley T.E. van den Beld
, Chris J. Lee
, Fred Bijkerk

^*Corresponding author for this work

XUV Optics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this work, the authors expose transferred multilayer graphene on a yttrium based hydrogen sensor. Using spectroscopic ellipsometry, they show that graphene, as well as amorphous carbon reference films, reduce diffusion of hydrogen to the underlying Y layer. Graphene and C are both etched due to exposure to atomic H, eventually leading to hydrogenation of the Y to YH₂ and YH₃. Multilayer graphene, even with defects originating from manufacturing and transfer, showed a higher resistance against atomic H etching compared to amorphous carbon films of a similar thickness.

Original language	English
Article number	051801
Number of pages	6
Journal	Journal of Vacuum Science and Technology B
Volume	37
Issue number	5
Early online date	29 Jul 2019
DOIs	https://doi.org/10.1116/1.5110213
Publication status	Published - 1 Sept 2019

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SDG 9 Industry, Innovation, and Infrastructure

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title = "Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensor",

abstract = "In this work, the authors expose transferred multilayer graphene on a yttrium based hydrogen sensor. Using spectroscopic ellipsometry, they show that graphene, as well as amorphous carbon reference films, reduce diffusion of hydrogen to the underlying Y layer. Graphene and C are both etched due to exposure to atomic H, eventually leading to hydrogenation of the Y to YH2 and YH3. Multilayer graphene, even with defects originating from manufacturing and transfer, showed a higher resistance against atomic H etching compared to amorphous carbon films of a similar thickness.",

author = "Mund, \{Baibhav K.\} and Olena Soroka and Sturm, \{Jacobus M.\} and \{van den Beld\}, \{Wesley T.E.\} and Lee, \{Chris J.\} and Fred Bijkerk",

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T1 - Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensor

AU - Mund, Baibhav K.

AU - Soroka, Olena

AU - Sturm, Jacobus M.

AU - van den Beld, Wesley T.E.

AU - Lee, Chris J.

AU - Bijkerk, Fred

PY - 2019/9/1

Y1 - 2019/9/1

N2 - In this work, the authors expose transferred multilayer graphene on a yttrium based hydrogen sensor. Using spectroscopic ellipsometry, they show that graphene, as well as amorphous carbon reference films, reduce diffusion of hydrogen to the underlying Y layer. Graphene and C are both etched due to exposure to atomic H, eventually leading to hydrogenation of the Y to YH2 and YH3. Multilayer graphene, even with defects originating from manufacturing and transfer, showed a higher resistance against atomic H etching compared to amorphous carbon films of a similar thickness.

AB - In this work, the authors expose transferred multilayer graphene on a yttrium based hydrogen sensor. Using spectroscopic ellipsometry, they show that graphene, as well as amorphous carbon reference films, reduce diffusion of hydrogen to the underlying Y layer. Graphene and C are both etched due to exposure to atomic H, eventually leading to hydrogenation of the Y to YH2 and YH3. Multilayer graphene, even with defects originating from manufacturing and transfer, showed a higher resistance against atomic H etching compared to amorphous carbon films of a similar thickness.

UR - https://www.scopus.com/pages/publications/85070069548

U2 - 10.1116/1.5110213

DO - 10.1116/1.5110213

M3 - Article

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JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 5

M1 - 051801

ER -

Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensor

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