Atomic layer deposition of SiO2-GeO2multilayers

Jordi Antoja-Lleonart; Silang Zhou; Kit de Hond; Sizhao Huang; Gertjan Koster; Guus Rijnders; Beatriz Noheda

doi:10.1063/5.0009844

Atomic layer deposition of SiO₂-GeO₂multilayers

Jordi Antoja-Lleonart^*, Silang Zhou, Kit de Hond, Sizhao Huang, Gertjan Koster, Guus Rijnders, Beatriz Noheda^*

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

Original language	English
Article number	0009844
Journal	Applied physics letters
Volume	117
Issue number	4
DOIs	https://doi.org/10.1063/5.0009844
Publication status	Published - 27 Jul 2020

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10.1063/5.0009844Licence: CC BY

Antoja-lleonart-2020-Atomic-layer-deposition-of-siogeo-mFinal published version, 1.39 MBLicence: CC BY

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abstract = "Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers. ",

author = "Jordi Antoja-Lleonart and Silang Zhou and {de Hond}, Kit and Sizhao Huang and Gertjan Koster and Guus Rijnders and Beatriz Noheda",

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AU - Antoja-Lleonart, Jordi

AU - Zhou, Silang

AU - de Hond, Kit

AU - Huang, Sizhao

AU - Koster, Gertjan

AU - Rijnders, Guus

AU - Noheda, Beatriz

PY - 2020/7/27

Y1 - 2020/7/27

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AB - Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

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Atomic layer deposition of SiO₂-GeO₂multilayers

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