Atomic Layer Deposition of W-based layers on SiO2

S. Bystrova, J. Holleman, R.A.M. Wolters, A.A.I. Aarnink

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

W<Si> and W1-xNx , where x=15-22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W<Si> films is about 4-5 monolayers/cycle at 300-350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325-350 ºC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW μΩ for W<Si> and as low as 220-340 mWμΩ for W1-xNx 20nm films. 4-point probe sheet resistivity test is applied to Cu/Barrier/SiO2 stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 ºC annealing cycle
Original languageEnglish
Title of host publicationProceedings of Semiconductor Advances for Future Electronics, SAFE 2003
PublisherSTW
Pages730-734
Number of pages5
Publication statusPublished - 25 Nov 2003
Event6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands
Duration: 25 Nov 200326 Nov 2003
Conference number: 6

Conference

Conference6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated titleSAFE
CountryNetherlands
CityVeldhoven
Period25/11/0326/11/03

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