Atomic Layer Deposition of W-based layers on SiO2

S. Bystrova; J. Holleman; R.A.M. Wolters; A.A.I. Aarnink

Atomic Layer Deposition of W-based layers on SiO₂

S. Bystrova, J. Holleman, R.A.M. Wolters, A.A.I. Aarnink

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

W<Si> and W_1-xN_x , where x=15-22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W<Si> films is about 4-5 monolayers/cycle at 300-350 ºC. Growth rate of W_1-xN_x is 0.5 monolayer/cycle at 325-350 ºC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW μΩ for W<Si> and as low as 220-340 mWμΩ for W_1-xN_x 20nm films. 4-point probe sheet resistivity test is applied to Cu/Barrier/SiO₂ stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 ºC annealing cycle

Original language	English
Title of host publication	Proceedings of Semiconductor Advances for Future Electronics, SAFE 2003
Publisher	STW
Pages	730-734
Number of pages	5
Publication status	Published - 25 Nov 2003
Event	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6

Conference

Conference	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

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Cite this

@inproceedings{e845da96b05c4de7b128c4700df8ca37,

title = "Atomic Layer Deposition of W-based layers on SiO2",

abstract = "W and W1-xNx , where x=15-22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4-5 monolayers/cycle at 300-350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325-350 ºC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW μΩ for W and as low as 220-340 mWμΩ for W1-xNx 20nm films. 4-point probe sheet resistivity test is applied to Cu/Barrier/SiO2 stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 ºC annealing cycle",

author = "S. Bystrova and J. Holleman and R.A.M. Wolters and A.A.I. Aarnink",

year = "2003",

month = nov,

day = "25",

language = "English",

pages = "730--734",

booktitle = "Proceedings of Semiconductor Advances for Future Electronics, SAFE 2003",

publisher = "STW",

note = "6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, SAFE ; Conference date: 25-11-2003 Through 26-11-2003",

}

TY - GEN

T1 - Atomic Layer Deposition of W-based layers on SiO2

AU - Bystrova, S.

AU - Holleman, J.

AU - Wolters, R.A.M.

AU - Aarnink, A.A.I.

N1 - Conference code: 6

PY - 2003/11/25

Y1 - 2003/11/25

N2 - W and W1-xNx , where x=15-22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4-5 monolayers/cycle at 300-350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325-350 ºC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW μΩ for W and as low as 220-340 mWμΩ for W1-xNx 20nm films. 4-point probe sheet resistivity test is applied to Cu/Barrier/SiO2 stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 ºC annealing cycle

AB - W and W1-xNx , where x=15-22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4-5 monolayers/cycle at 300-350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325-350 ºC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW μΩ for W and as low as 220-340 mWμΩ for W1-xNx 20nm films. 4-point probe sheet resistivity test is applied to Cu/Barrier/SiO2 stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 ºC annealing cycle

M3 - Conference contribution

SP - 730

EP - 734

BT - Proceedings of Semiconductor Advances for Future Electronics, SAFE 2003

PB - STW

T2 - 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003

Y2 - 25 November 2003 through 26 November 2003

ER -