Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition

Tjaša Parkelj Potočnik, Erik Zupanič, Wen Yi Tong, Eric Bousquet, Daniel Diaz Fernandez, Gertjan Koster, Philippe Ghosez, Matjaž Spreitzer (Corresponding Author)

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

A buffer layer formed by depositing a ½ monolayer of Sr on Si(0 0 1) is known to passivate the Si surface, while its surface structure constitutes a suitable template for the integration of various functional oxides with the existing Si platform. We used Pulsed Laser Deposition (PLD) to prepare a Sr/Si(0 0 1)(1 × 2) surface and analysed it using in-situ Reflection High-Energy Diffraction (RHEED) in combination with low-temperature Scanning Tunneling Microscopy (STM). The STM images reveal an atomically ordered surface with terraces composed of one-dimensional (1D) chains running along perpendicular directions on neighbouring terraces. The 1D chains are separated by 0.78 nm and exhibit a low-amplitude corrugation with a period of 0.39 nm. The measured values agree well with the size of the (1 × 2) unit cell observed for similar MBE-grown surfaces, while the density of the surface defects is somewhat higher in the presented case. According to simulated STM images based on DFT calculations, two types of surface defects were identified and explored: arrays of Sr vacancies and Sr adatoms. These results show that PLD can offer precise control for the preparation of high-quality Sr-buffered Si(0 0 1) surfaces.

LanguageEnglish
Pages664-669
Number of pages6
JournalApplied surface science
Volume471
DOIs
Publication statusPublished - 31 Mar 2019

Fingerprint

Pulsed laser deposition
Scanning tunneling microscopy
Surface defects
Adatoms
Buffer layers
Molecular beam epitaxy
Discrete Fourier transforms
Surface structure
Oxides
Vacancies
Monolayers
Diffraction
Temperature

Keywords

  • DFT
  • Pulsed laser deposition
  • Scanning tunneling microscopy
  • Silicon
  • Strontium
  • Surface defects

Cite this

Parkelj Potočnik, T., Zupanič, E., Tong, W. Y., Bousquet, E., Diaz Fernandez, D., Koster, G., ... Spreitzer, M. (2019). Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition. Applied surface science, 471, 664-669. https://doi.org/10.1016/j.apsusc.2018.12.027
Parkelj Potočnik, Tjaša ; Zupanič, Erik ; Tong, Wen Yi ; Bousquet, Eric ; Diaz Fernandez, Daniel ; Koster, Gertjan ; Ghosez, Philippe ; Spreitzer, Matjaž. / Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition. In: Applied surface science. 2019 ; Vol. 471. pp. 664-669.
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abstract = "A buffer layer formed by depositing a ½ monolayer of Sr on Si(0 0 1) is known to passivate the Si surface, while its surface structure constitutes a suitable template for the integration of various functional oxides with the existing Si platform. We used Pulsed Laser Deposition (PLD) to prepare a Sr/Si(0 0 1)(1 × 2) surface and analysed it using in-situ Reflection High-Energy Diffraction (RHEED) in combination with low-temperature Scanning Tunneling Microscopy (STM). The STM images reveal an atomically ordered surface with terraces composed of one-dimensional (1D) chains running along perpendicular directions on neighbouring terraces. The 1D chains are separated by 0.78 nm and exhibit a low-amplitude corrugation with a period of 0.39 nm. The measured values agree well with the size of the (1 × 2) unit cell observed for similar MBE-grown surfaces, while the density of the surface defects is somewhat higher in the presented case. According to simulated STM images based on DFT calculations, two types of surface defects were identified and explored: arrays of Sr vacancies and Sr adatoms. These results show that PLD can offer precise control for the preparation of high-quality Sr-buffered Si(0 0 1) surfaces.",
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Parkelj Potočnik, T, Zupanič, E, Tong, WY, Bousquet, E, Diaz Fernandez, D, Koster, G, Ghosez, P & Spreitzer, M 2019, 'Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition' Applied surface science, vol. 471, pp. 664-669. https://doi.org/10.1016/j.apsusc.2018.12.027

Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition. / Parkelj Potočnik, Tjaša; Zupanič, Erik; Tong, Wen Yi; Bousquet, Eric; Diaz Fernandez, Daniel; Koster, Gertjan; Ghosez, Philippe; Spreitzer, Matjaž (Corresponding Author).

In: Applied surface science, Vol. 471, 31.03.2019, p. 664-669.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition

AU - Parkelj Potočnik, Tjaša

AU - Zupanič, Erik

AU - Tong, Wen Yi

AU - Bousquet, Eric

AU - Diaz Fernandez, Daniel

AU - Koster, Gertjan

AU - Ghosez, Philippe

AU - Spreitzer, Matjaž

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