Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO 3 based Resistive Switching Devices

Carsten Funck, Peter C. Schmidt, C. Baumer, Regina Dittmann, Manfred Martin, Rainer Waser, Stephan Menzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Resistive-switching devices can be toggled between a low resistive state and a high resistive state. One concept to realize such switches is the valance change mechanism. In this memory concept, oxygen vacancy defects move due to an external electric field. This reconfiguration of oxygen defects leads to a change in the electronic conduction of the memory device by a modulation of one electrode Schottky contact. Here we focus on a Nb:SrTiO 3 /SrTiO 3 /Pt model resistive switching system, where the resistance change is obtained at the Pt electrode. To describe the current transport on the atomic scale we used density functional theory combined with the non-equilibrium Green's function formalism. Our simulation results reveal that the ohmic Nb:SrTiO 3 contact can open a direct tunneling path, which could superimpose the resistive switching effect in these devices. This tunneling path pose a principle physical limit for the high resistive state in resistive switching devices.

Original languageEnglish
Title of host publicationNVMTS 2018 - Non-Volatile Memory Technology Symposium 2018
PublisherIEEE
ISBN (Electronic)9781538677834
DOIs
Publication statusPublished - 4 Jan 2019
Externally publishedYes
Event18th Non-Volatile Memory Technology Symposium, NVMTS 2018 - Sendai, Japan
Duration: 22 Oct 201824 Oct 2018

Publication series

NameNVMTS 2018 - Non-Volatile Memory Technology Symposium 2018

Conference

Conference18th Non-Volatile Memory Technology Symposium, NVMTS 2018
CountryJapan
CitySendai
Period22/10/1824/10/18

Keywords

  • Field Emission
  • Memory
  • Resistive Switching
  • Schottky emission
  • Thermionic Emission
  • Tunneling

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