Avoiding dislocations in ion-implanted silicon

F.W. Saris, J.S. Custer, R.J. Schreutelkamp, J.R. Liefting, R. Wijburg, H. Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)
    23 Downloads (Pure)


    Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.
    Original languageEnglish
    Title of host publication22nd European Solid State Device Research Conference (ESSDERC '92)
    Place of PublicationPiscataway, NJ, USA
    Number of pages0
    ISBN (Print)0444894780
    Publication statusPublished - 14 Sep 1992
    Event22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium
    Duration: 14 Sep 199217 Sep 1992
    Conference number: 22


    Conference22nd European Solid State Device Research Conference, ESSDERC 1992
    Abbreviated titleESSDERC

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