Avoiding dislocations in ion-implanted silicon

F.W. Saris; J.S. Custer; R.J. Schreutelkamp; J.R. Liefting; R. Wijburg; H. Wallinga

doi:10.1016/0167-9317(92)90453-X

Avoiding dislocations in ion-implanted silicon

F.W. Saris
, J.S. Custer
, R.J. Schreutelkamp
, J.R. Liefting
, R. Wijburg
, H. Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

126 Downloads (Pure)

Abstract

Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.

Original language	English
Title of host publication	22nd European Solid State Device Research Conference (ESSDERC '92)
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	357-362
Number of pages	0
ISBN (Print)	0444894780
DOIs	https://doi.org/10.1016/0167-9317(92)90453-X
Publication status	Published - 14 Sept 1992
Event	22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium Duration: 14 Sept 1992 → 17 Sept 1992 Conference number: 22

Conference

Conference	22nd European Solid State Device Research Conference, ESSDERC 1992
Abbreviated title	ESSDERC
Country/Territory	Belgium
City	Leuven
Period	14/09/92 → 17/09/92

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Saris1992avoidingFinal published version, 1.77 MB

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title = "Avoiding dislocations in ion-implanted silicon",

abstract = "Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.",

author = "F.W. Saris and J.S. Custer and R.J. Schreutelkamp and J.R. Liefting and R. Wijburg and H. Wallinga",

year = "1992",

month = sep,

day = "14",

doi = "10.1016/0167-9317(92)90453-X",

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pages = "357--362",

booktitle = "22nd European Solid State Device Research Conference (ESSDERC '92)",

publisher = "IEEE",

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note = "22nd European Solid State Device Research Conference, ESSDERC 1992, ESSDERC ; Conference date: 14-09-1992 Through 17-09-1992",

}

Saris, FW, Custer, JS, Schreutelkamp, RJ, Liefting, JR, Wijburg, R & Wallinga, H 1992, Avoiding dislocations in ion-implanted silicon. in 22nd European Solid State Device Research Conference (ESSDERC '92). IEEE, Piscataway, NJ, USA, pp. 357-362, 22nd European Solid State Device Research Conference, ESSDERC 1992, Leuven, Belgium, 14/09/92. https://doi.org/10.1016/0167-9317(92)90453-X

TY - GEN

T1 - Avoiding dislocations in ion-implanted silicon

AU - Saris, F.W.

AU - Custer, J.S.

AU - Schreutelkamp, R.J.

AU - Liefting, J.R.

AU - Wijburg, R.

AU - Wallinga, H.

N1 - Conference code: 22

PY - 1992/9/14

Y1 - 1992/9/14

N2 - Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.

AB - Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.

U2 - 10.1016/0167-9317(92)90453-X

DO - 10.1016/0167-9317(92)90453-X

M3 - Conference contribution

SN - 0444894780

SP - 357

EP - 362

BT - 22nd European Solid State Device Research Conference (ESSDERC '92)

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 22nd European Solid State Device Research Conference, ESSDERC 1992

Y2 - 14 September 1992 through 17 September 1992

ER -

Avoiding dislocations in ion-implanted silicon

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