Avoiding pre-amorphization damage in MeV heavy ion-implanted silicon

R.J. Schreutelkamp, J.S. Custer, J.R. Liefting, F.W. Saris

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)
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Abstract

Implantation of 1.0 MeV 115In in Si results in secondary‐defect formation during subsequent 900 °C annealing if the total number of displaced Si atoms is greater than 1.6×1017/cm2, achieved with a dose near 1.5×1013/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to remove the implant damage. While a single 6×1013 In/cm2implant results in a high density of dislocation loops after annealing, instead using four separate 1.5×1013 In/cm2 implants each followed by an anneal leads to the formation of only a few partial dislocations.
Original languageEnglish
Pages (from-to)2827-2829
JournalApplied physics letters
Volume58
Issue number24
DOIs
Publication statusPublished - 1991
Externally publishedYes

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