B4C/Si based EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation

Viacheslav Medvedev, Andrey Yakshin, Robbert Wilhelmus Elisabeth van de Kruijs, V.M. Krivtsun, S.N. Yakunin, Frederik Bijkerk

Research output: Other contributionOther research output

Abstract

We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation which has near-zero reflectance for CO2 laser radiation (10.6 mm). The EUV reflecting multilayer coating is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allows utilizing the multilayer coating in a resonant absorbing structure for 10.6 mm. We have integrated the multilayer structure with a well known quarter-wavelength thin film absorber. Experimental samples were manufactured using magnetron sputtering deposition technique. The samples demonstrate suppression of the infrared radiation by more than two orders of magnitude. At the same time EUV peak reflectance amounts 45% at 13.5 nm, with FWHM being about 0.284 nm that matches the 2% bandwidth of a typical EUV litho tool optical system. Therefore such a mirror can replace a standard Mo/Si mirror in an EUV lithography tool to form an efficient solution for the suppression of unwanted CO2 laser radiation.
Original languageUndefined
Place of PublicationMaui, Hawaii, US
Publication statusPublished - 2011

Keywords

  • METIS-304964

Cite this

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title = "B4C/Si based EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation",
abstract = "We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation which has near-zero reflectance for CO2 laser radiation (10.6 mm). The EUV reflecting multilayer coating is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allows utilizing the multilayer coating in a resonant absorbing structure for 10.6 mm. We have integrated the multilayer structure with a well known quarter-wavelength thin film absorber. Experimental samples were manufactured using magnetron sputtering deposition technique. The samples demonstrate suppression of the infrared radiation by more than two orders of magnitude. At the same time EUV peak reflectance amounts 45{\%} at 13.5 nm, with FWHM being about 0.284 nm that matches the 2{\%} bandwidth of a typical EUV litho tool optical system. Therefore such a mirror can replace a standard Mo/Si mirror in an EUV lithography tool to form an efficient solution for the suppression of unwanted CO2 laser radiation.",
keywords = "METIS-304964",
author = "Viacheslav Medvedev and Andrey Yakshin and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and V.M. Krivtsun and S.N. Yakunin and Frederik Bijkerk",
year = "2011",
language = "Undefined",
type = "Other",

}

B4C/Si based EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation. / Medvedev, Viacheslav; Yakshin, Andrey; van de Kruijs, Robbert Wilhelmus Elisabeth; Krivtsun, V.M.; Yakunin, S.N.; Bijkerk, Frederik.

Maui, Hawaii, US. 2011, .

Research output: Other contributionOther research output

TY - GEN

T1 - B4C/Si based EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation

AU - Medvedev, Viacheslav

AU - Yakshin, Andrey

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Krivtsun, V.M.

AU - Yakunin, S.N.

AU - Bijkerk, Frederik

PY - 2011

Y1 - 2011

N2 - We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation which has near-zero reflectance for CO2 laser radiation (10.6 mm). The EUV reflecting multilayer coating is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allows utilizing the multilayer coating in a resonant absorbing structure for 10.6 mm. We have integrated the multilayer structure with a well known quarter-wavelength thin film absorber. Experimental samples were manufactured using magnetron sputtering deposition technique. The samples demonstrate suppression of the infrared radiation by more than two orders of magnitude. At the same time EUV peak reflectance amounts 45% at 13.5 nm, with FWHM being about 0.284 nm that matches the 2% bandwidth of a typical EUV litho tool optical system. Therefore such a mirror can replace a standard Mo/Si mirror in an EUV lithography tool to form an efficient solution for the suppression of unwanted CO2 laser radiation.

AB - We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation which has near-zero reflectance for CO2 laser radiation (10.6 mm). The EUV reflecting multilayer coating is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allows utilizing the multilayer coating in a resonant absorbing structure for 10.6 mm. We have integrated the multilayer structure with a well known quarter-wavelength thin film absorber. Experimental samples were manufactured using magnetron sputtering deposition technique. The samples demonstrate suppression of the infrared radiation by more than two orders of magnitude. At the same time EUV peak reflectance amounts 45% at 13.5 nm, with FWHM being about 0.284 nm that matches the 2% bandwidth of a typical EUV litho tool optical system. Therefore such a mirror can replace a standard Mo/Si mirror in an EUV lithography tool to form an efficient solution for the suppression of unwanted CO2 laser radiation.

KW - METIS-304964

M3 - Other contribution

CY - Maui, Hawaii, US

ER -