Backwafer optical lithography and wafer distortion in substrate transfer technologies

H. W. van Zeijl, J. Slabbekoorn, L. K. Nanver, P. W L van Dijk, A. Berthold, T. Machielsen

Research output: Contribution to journalConference articleAcademicpeer-review

8 Citations (Scopus)
108 Downloads (Pure)


A method has been developed by which, after removal of the bulk silicon in a substrate transfer process, the backside of a wafer (the backwafer) can be processed with the same lithography as the front side of the wafer (the frontwafer). To achieve an accurate front- to backwafer alignment accuracy, mirror symmetric alignment markers for an ASML PAS5000 waferstepper have been developed and applied in a Silicon-on-Anything process. In this manner minimum dimension low-ohmic contacts were fabricated on the backwafer. The mirror symmetric alignment markers are used in combination with standard overlay test procedures to characterize the front- to backwafer overlay accuracy. The measured overlay errors are divided up in non-mirror symmetric lens distortions and wafer distortion as a result of the substrate transfer process. The practical minimum device feature that can be realized on the backwafer is limited to 0.9-1.2 μm as a result of front- to backwafer overlay errors.

Original languageEnglish
Pages (from-to)200-207
Number of pages8
JournalProceedings of SPIE - the international society for optical engineering
Issue number1
Publication statusPublished - 18 Aug 2000
Externally publishedYes
EventMicroelectronic Manufacturing 2000 - Santa Clara, United States
Duration: 18 Sept 200019 Sept 2000


  • Alignment markers
  • Overlay accuracy
  • Substrate distortion
  • Substrate transfer
  • Waferstepper matching


Dive into the research topics of 'Backwafer optical lithography and wafer distortion in substrate transfer technologies'. Together they form a unique fingerprint.

Cite this