Backwafer optical lithography and wafer distortion in substrate transfer technologies

H. W. van Zeijl; J. Slabbekoorn; L. K. Nanver; P. W L van Dijk; A. Berthold; T. Machielsen

doi:10.1117/12.395730

Backwafer optical lithography and wafer distortion in substrate transfer technologies

H. W. van Zeijl, J. Slabbekoorn, L. K. Nanver, P. W L van Dijk, A. Berthold, T. Machielsen

Research output: Contribution to journal › Conference article › Academic › peer-review

8 Citations (Scopus)

41 Downloads (Pure)

Abstract

A method has been developed by which, after removal of the bulk silicon in a substrate transfer process, the backside of a wafer (the backwafer) can be processed with the same lithography as the front side of the wafer (the frontwafer). To achieve an accurate front- to backwafer alignment accuracy, mirror symmetric alignment markers for an ASML PAS5000 waferstepper have been developed and applied in a Silicon-on-Anything process. In this manner minimum dimension low-ohmic contacts were fabricated on the backwafer. The mirror symmetric alignment markers are used in combination with standard overlay test procedures to characterize the front- to backwafer overlay accuracy. The measured overlay errors are divided up in non-mirror symmetric lens distortions and wafer distortion as a result of the substrate transfer process. The practical minimum device feature that can be realized on the backwafer is limited to 0.9-1.2 μm as a result of front- to backwafer overlay errors.

Original language	English
Pages (from-to)	200-207
Number of pages	8
Journal	Proceedings of SPIE - the international society for optical engineering
Volume	4181
Issue number	1
DOIs	https://doi.org/10.1117/12.395730
Publication status	Published - 18 Aug 2000
Externally published	Yes
Event	Microelectronic Manufacturing 2000 - Santa Clara, United States Duration: 18 Sep 2000 → 19 Sep 2000

Keywords

Alignment markers
Overlay accuracy
Substrate distortion
Substrate transfer
Waferstepper matching

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title = "Backwafer optical lithography and wafer distortion in substrate transfer technologies",

abstract = "A method has been developed by which, after removal of the bulk silicon in a substrate transfer process, the backside of a wafer (the backwafer) can be processed with the same lithography as the front side of the wafer (the frontwafer). To achieve an accurate front- to backwafer alignment accuracy, mirror symmetric alignment markers for an ASML PAS5000 waferstepper have been developed and applied in a Silicon-on-Anything process. In this manner minimum dimension low-ohmic contacts were fabricated on the backwafer. The mirror symmetric alignment markers are used in combination with standard overlay test procedures to characterize the front- to backwafer overlay accuracy. The measured overlay errors are divided up in non-mirror symmetric lens distortions and wafer distortion as a result of the substrate transfer process. The practical minimum device feature that can be realized on the backwafer is limited to 0.9-1.2 μm as a result of front- to backwafer overlay errors.",

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Backwafer optical lithography and wafer distortion in substrate transfer technologies. / van Zeijl, H. W.; Slabbekoorn, J.; Nanver, L. K.; van Dijk, P. W L; Berthold, A.; Machielsen, T.

In: Proceedings of SPIE - the international society for optical engineering, Vol. 4181, No. 1, 18.08.2000, p. 200-207.

Research output: Contribution to journal › Conference article › Academic › peer-review

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