Band Filling and Interband Scattering Effects in MgB2: Carbon versus Aluminum Doping

Jens Kortus, Oleg V. Dolgov, Reinhard K. Kremer, Alexandre Avraamovitch Golubov

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Abstract

We argue, based on band structure calculations and the Eliashberg theory, that the observed decrease of Tc of Al and C doped MgB2 samples can be understood mainly in terms of a band filling effect due to the electron doping by Al and C. A simple scaling of the electron-phonon coupling constant ¿ by the variation of the density of states as a function of electron doping is sufficient to capture the experimentally observed behavior. Further, we also explain the long standing open question of the experimental observation of a nearly constant ¿ gap as a function of doping by a compensation of the effect of band filling and interband scattering. Both effects together generate a nearly constant ¿ gap and shift the merging point of both gaps to higher doping concentrations, resolving the discrepancy between experiment and theoretical predictions based on interband scattering only
Original languageUndefined
Pages (from-to)027002-
JournalPhysical review letters
Volume94
Issue number2
DOIs
Publication statusPublished - 2005

Keywords

  • IR-52940
  • METIS-224970

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