Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs

J.-L.P.J. van der Steen, R.J.E. Hueting, G.D.J. Smit, T. Hoang, J. Holleman, J. Schmitz

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    Abstract

    This work shows experimental evidence of structural quantum confinement showing up in the electrical device characteristics through a widening of the band gap. In this work, subthreshold currents in long channel ultra-thin SOI MOSFETs with (100) crystal orientation have been analyzed for various temperatures and different silicon body thicknesses in order to extract shifts in the band edges. Although the offsets in both the valence band and conduction band contribute to the total band gap, this work concentrates on the valence band offset, as the investigated devices are p-MOSFETs. Likewise, changes in the conduction band can be measured on n-type devices. The valence band edge was found to move downward for decreasing silicon body thickness, corresponding to a widening of the band gap. This implies that devices with an extremely thin semiconductor body exhibit a stronger temperature dependence. Good agreement with theory was observed.
    Original languageEnglish
    Title of host publication10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages460-464
    Number of pages5
    ISBN (Print)978-90-73461-49-9
    Publication statusPublished - 29 Nov 2007
    Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
    Duration: 29 Nov 200730 Nov 2007

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number7

    Workshop

    Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
    CountryNetherlands
    CityVeldhoven
    Period29/11/0730/11/07

    Keywords

    • SC-DPM: Device Physics and Modeling

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