TY - GEN
T1 - Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs
AU - van der Steen, J.-L.P.J.
AU - Hueting, R.J.E.
AU - Smit, G.D.J.
AU - Hoang, T.
AU - Holleman, J.
AU - Schmitz, J.
PY - 2007/11/29
Y1 - 2007/11/29
N2 - This work shows experimental evidence of structural quantum confinement showing up in the electrical device characteristics through a widening of the band gap. In this work, subthreshold currents in long channel ultra-thin SOI MOSFETs with (100) crystal orientation have been analyzed for various temperatures and different silicon body thicknesses in order to extract shifts in the band edges. Although the offsets in both the valence band and conduction band contribute to the total band gap, this work concentrates on the valence band offset, as the investigated devices are p-MOSFETs. Likewise, changes in the conduction band can be measured on n-type devices. The valence band edge was found to move downward for decreasing silicon body thickness, corresponding to a widening of the band gap. This implies that devices with an extremely thin semiconductor body exhibit a stronger temperature dependence. Good agreement with theory was observed.
AB - This work shows experimental evidence of structural quantum confinement showing up in the electrical device characteristics through a widening of the band gap. In this work, subthreshold currents in long channel ultra-thin SOI MOSFETs with (100) crystal orientation have been analyzed for various temperatures and different silicon body thicknesses in order to extract shifts in the band edges. Although the offsets in both the valence band and conduction band contribute to the total band gap, this work concentrates on the valence band offset, as the investigated devices are p-MOSFETs. Likewise, changes in the conduction band can be measured on n-type devices. The valence band edge was found to move downward for decreasing silicon body thickness, corresponding to a widening of the band gap. This implies that devices with an extremely thin semiconductor body exhibit a stronger temperature dependence. Good agreement with theory was observed.
KW - SC-DPM: Device Physics and Modeling
M3 - Conference contribution
SN - 978-90-73461-49-9
SP - 460
EP - 464
BT - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
PB - STW
CY - Utrecht, The Netherlands
T2 - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
Y2 - 29 November 2007 through 30 November 2007
ER -