Band offsets and density of Ti3+ states probed by x-ray photoemission o LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors

G. Drera, G. Salvinelli, Alexander Brinkman, Mark Huijben, Gertjan Koster, H. Hilgenkamp, Augustinus J.H.M. Rijnders, D. Visentin, L. Sangaletti

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Abstract

A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by x-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band offset and the density of Ti+3 states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low PO2 yields Ti+3 states with higher density and lower binding energy compared to the sample grown at high PO2 or to the bare STO reference sample. Band-offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence-band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, which displays the largest Ti 2p and Sr 3d peak widths
Original languageEnglish
Article number075435
Pages (from-to)-
Number of pages9
JournalPhysical review B: Condensed matter and materials physics
Volume87
Issue number7
DOIs
Publication statusPublished - 2013

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Photoemission
Electronic properties
photoelectric emission
X rays
Photoelectron spectroscopy
Valence bands
Binding energy
Partial pressure
Heterojunctions
x rays
electronics
partial pressure
binding energy
valence
conduction
strontium titanium oxide
spectroscopy

Keywords

  • IR-86927
  • METIS-297196

Cite this

@article{aa507d51cc2e4072a8c4cec19360ebf5,
title = "Band offsets and density of Ti3+ states probed by x-ray photoemission o LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors",
abstract = "A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by x-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band offset and the density of Ti+3 states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low PO2 yields Ti+3 states with higher density and lower binding energy compared to the sample grown at high PO2 or to the bare STO reference sample. Band-offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence-band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, which displays the largest Ti 2p and Sr 3d peak widths",
keywords = "IR-86927, METIS-297196",
author = "G. Drera and G. Salvinelli and Alexander Brinkman and Mark Huijben and Gertjan Koster and H. Hilgenkamp and Rijnders, {Augustinus J.H.M.} and D. Visentin and L. Sangaletti",
year = "2013",
doi = "10.1103/PhysRevB.87.075435",
language = "English",
volume = "87",
pages = "--",
journal = "Physical review B: Condensed matter and materials physics",
issn = "1098-0121",
publisher = "American Physical Society",
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TY - JOUR

T1 - Band offsets and density of Ti3+ states probed by x-ray photoemission o LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors

AU - Drera, G.

AU - Salvinelli, G.

AU - Brinkman, Alexander

AU - Huijben, Mark

AU - Koster, Gertjan

AU - Hilgenkamp, H.

AU - Rijnders, Augustinus J.H.M.

AU - Visentin, D.

AU - Sangaletti, L.

PY - 2013

Y1 - 2013

N2 - A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by x-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band offset and the density of Ti+3 states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low PO2 yields Ti+3 states with higher density and lower binding energy compared to the sample grown at high PO2 or to the bare STO reference sample. Band-offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence-band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, which displays the largest Ti 2p and Sr 3d peak widths

AB - A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by x-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band offset and the density of Ti+3 states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low PO2 yields Ti+3 states with higher density and lower binding energy compared to the sample grown at high PO2 or to the bare STO reference sample. Band-offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence-band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, which displays the largest Ti 2p and Sr 3d peak widths

KW - IR-86927

KW - METIS-297196

U2 - 10.1103/PhysRevB.87.075435

DO - 10.1103/PhysRevB.87.075435

M3 - Article

VL - 87

SP - -

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

IS - 7

M1 - 075435

ER -