Bandgap engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy

Antoine Fleurence; Yuto Awatani; Camille Huet; Frank B. Wiggers; Steaphan M. Wallace; Takahiro Yonezawa; Yukiko Yamada-Takamura

doi:10.48550/arXiv.2003.04612

Bandgap engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy

Antoine Fleurence
, Yuto Awatani
, Camille Huet
, Frank B. Wiggers
, Steaphan M. Wallace
, Takahiro Yonezawa
, Yukiko Yamada-Takamura

Research output: Working paper › Preprint › Professional

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Abstract

In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si5Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB2(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si6−xGex alloy (with x between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with x observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.

Original language	English
Publisher	ArXiv.org
DOIs	https://doi.org/10.48550/arXiv.2003.04612
Publication status	Published - 10 Mar 2020

Keywords

cond-mat.mtrl-sci

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1 Article

Band engineering in an epitaxial two-dimensional honeycomb Si6-xGex alloy
Fleurence, A., Awatani, Y., Huet, C., Wiggers, F. B., Wallace, S. M., Yonezawa, T. & Yamada-Takamura, Y., Jan 2021, In: Physical Review Materials. 5, 1, L011001.
Research output: Contribution to journal › Article › Academic › peer-review
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@techreport{a143e1bcf16d4862bcaebc4166337684,

title = "Bandgap engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy",

abstract = "In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si5Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB2(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si6−xGex alloy (with x between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with x observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.",

keywords = "cond-mat.mtrl-sci",

author = "Antoine Fleurence and Yuto Awatani and Camille Huet and Wiggers, \{Frank B.\} and Wallace, \{Steaphan M.\} and Takahiro Yonezawa and Yukiko Yamada-Takamura",

year = "2020",

month = mar,

day = "10",

doi = "10.48550/arXiv.2003.04612",

language = "English",

publisher = "ArXiv.org",

type = "WorkingPaper",

institution = "ArXiv.org",

}

TY - UNPB

T1 - Bandgap engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy

AU - Fleurence, Antoine

AU - Awatani, Yuto

AU - Huet, Camille

AU - Wiggers, Frank B.

AU - Wallace, Steaphan M.

AU - Yonezawa, Takahiro

AU - Yamada-Takamura, Yukiko

PY - 2020/3/10

Y1 - 2020/3/10

N2 - In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si5Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB2(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si6−xGex alloy (with x between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with x observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.

AB - In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si5Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB2(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si6−xGex alloy (with x between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with x observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.

KW - cond-mat.mtrl-sci

U2 - 10.48550/arXiv.2003.04612

DO - 10.48550/arXiv.2003.04612

M3 - Preprint

BT - Bandgap engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy

PB - ArXiv.org

ER -

Bandgap engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy

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Band engineering in an epitaxial two-dimensional honeycomb Si6-xGex alloy

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