TY - JOUR
T1 - Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes
AU - Hajlasz, Marcin
AU - Donkers, Johan J.T.M.
AU - Pandey, Saurabh
AU - Hurkx, Fred
AU - Hueting, Raymond J.E.
AU - Gravesteijn, Dirk J.
PY - 2017/10/1
Y1 - 2017/10/1
N2 - In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.
AB - In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.
KW - AlGaN/GaN
KW - Diode
KW - Schottky barrier height (SBH)
KW - Strain
KW - Stress
KW - 22/4 OA procedure
UR - http://www.scopus.com/inward/record.url?scp=85028734971&partnerID=8YFLogxK
U2 - 10.1109/TED.2017.2742991
DO - 10.1109/TED.2017.2742991
M3 - Article
AN - SCOPUS:85028734971
SN - 0018-9383
VL - 64
SP - 4050
EP - 4056
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
M1 - 8019820
ER -