Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

Marcin Hajlasz*, Johan J.T.M. Donkers, Saurabh Pandey, Fred Hurkx, Raymond J.E. Hueting, Dirk J. Gravesteijn

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    4 Citations (Scopus)
    7 Downloads (Pure)


    In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.

    Original languageEnglish
    Article number8019820
    Pages (from-to)4050-4056
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Issue number10
    Publication statusPublished - 1 Oct 2017


    • AlGaN/GaN
    • Diode
    • Schottky barrier height (SBH)
    • Strain
    • Stress
    • 22/4 OA procedure

    Cite this