Abstract
In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.
Original language | English |
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Article number | 8019820 |
Pages (from-to) | 4050-4056 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 64 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Oct 2017 |
Keywords
- AlGaN/GaN
- Diode
- Schottky barrier height (SBH)
- Strain
- Stress
- 22/4 OA procedure