Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

Marcin Hajlasz; Johan J.T.M. Donkers; Saurabh Pandey; Fred Hurkx; Raymond J.E. Hueting; Dirk J. Gravesteijn

doi:10.1109/TED.2017.2742991

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

Marcin Hajlasz^*, Johan J.T.M. Donkers, Saurabh Pandey, Fred Hurkx, Raymond J.E. Hueting, Dirk J. Gravesteijn

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

87 Downloads (Pure)

Abstract

In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.

Original language	English
Article number	8019820
Pages (from-to)	4050-4056
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TED.2017.2742991
Publication status	Published - 1 Oct 2017

Keywords

AlGaN/GaN
Diode
Schottky barrier height (SBH)
Strain
Stress
22/4 OA procedure

Access to Document

10.1109/TED.2017.2742991

ArticleFinal published version, 1.98 MB

Cite this

@article{afe9956110344566960446c7d7376f52,

title = "Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes",

abstract = "In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.",

keywords = "AlGaN/GaN, Diode, Schottky barrier height (SBH), Strain, Stress, 22/4 OA procedure",

author = "Marcin Hajlasz and Donkers, {Johan J.T.M.} and Saurabh Pandey and Fred Hurkx and Hueting, {Raymond J.E.} and Gravesteijn, {Dirk J.}",

year = "2017",

month = oct,

day = "1",

doi = "10.1109/TED.2017.2742991",

language = "English",

volume = "64",

pages = "4050--4056",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "10",

}

TY - JOUR

T1 - Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

AU - Hajlasz, Marcin

AU - Donkers, Johan J.T.M.

AU - Pandey, Saurabh

AU - Hurkx, Fred

AU - Hueting, Raymond J.E.

AU - Gravesteijn, Dirk J.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.

AB - In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.

KW - AlGaN/GaN

KW - Diode

KW - Schottky barrier height (SBH)

KW - Strain

KW - Stress

KW - 22/4 OA procedure

U2 - 10.1109/TED.2017.2742991

DO - 10.1109/TED.2017.2742991

M3 - Article

AN - SCOPUS:85028734971

SN - 0018-9383

VL - 64

SP - 4050

EP - 4056

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 8019820

ER -

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

Abstract

Keywords

Access to Document

Fingerprint

Cite this