Abstract
The down-scaling of electrical components requires a proper understanding of the physical mechanisms governing charge transport. Here, we have investigated atomic-scale contacts and their transport characteristics on WS2 using conductive atomic force microscopy (c-AFM). We demonstrate that c-AFM can provide true atomic resolution, revealing atom vacancies, adatoms, and periodic modulations arising from electronic effects. Moreover, we find a lateral variation of the surface conductivity that arises from the lattice periodicity of WS2. Three distinct sites are identified, i.e., atop, bridge, and hollow. The current transport across these atomic metal-semiconductor interfaces is understood by considering thermionic emission and Fowler-Nordheim tunnelling. Current modulations arising from point defects and the contact geometry promise a novel route for the direct control of atomic point contacts in diodes and devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1190-1196 |
| Journal | Nano letters |
| Volume | 19 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 13 Feb 2019 |
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Keywords
- UT-Hybrid-D
- Barrier height
- conductive atomic force microscopy
- defects
- transition metal dichalcogenides
- WS
- atomic contacts
Cite this
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Barrier Inhomogeneities in Atomic Contacts on WS2. / Nowakowski, Krystian; Zandvliet, Harold J.W.; Bampoulis, Pantelis (Corresponding Author).
In: Nano letters, Vol. 19, No. 2, 13.02.2019, p. 1190-1196.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Barrier Inhomogeneities in Atomic Contacts on WS2
AU - Nowakowski, Krystian
AU - Zandvliet, Harold J.W.
AU - Bampoulis, Pantelis
N1 - ACS deal
PY - 2019/2/13
Y1 - 2019/2/13
N2 - The down-scaling of electrical components requires a proper understanding of the physical mechanisms governing charge transport. Here, we have investigated atomic-scale contacts and their transport characteristics on WS2 using conductive atomic force microscopy (c-AFM). We demonstrate that c-AFM can provide true atomic resolution, revealing atom vacancies, adatoms, and periodic modulations arising from electronic effects. Moreover, we find a lateral variation of the surface conductivity that arises from the lattice periodicity of WS2. Three distinct sites are identified, i.e., atop, bridge, and hollow. The current transport across these atomic metal-semiconductor interfaces is understood by considering thermionic emission and Fowler-Nordheim tunnelling. Current modulations arising from point defects and the contact geometry promise a novel route for the direct control of atomic point contacts in diodes and devices.
AB - The down-scaling of electrical components requires a proper understanding of the physical mechanisms governing charge transport. Here, we have investigated atomic-scale contacts and their transport characteristics on WS2 using conductive atomic force microscopy (c-AFM). We demonstrate that c-AFM can provide true atomic resolution, revealing atom vacancies, adatoms, and periodic modulations arising from electronic effects. Moreover, we find a lateral variation of the surface conductivity that arises from the lattice periodicity of WS2. Three distinct sites are identified, i.e., atop, bridge, and hollow. The current transport across these atomic metal-semiconductor interfaces is understood by considering thermionic emission and Fowler-Nordheim tunnelling. Current modulations arising from point defects and the contact geometry promise a novel route for the direct control of atomic point contacts in diodes and devices.
KW - UT-Hybrid-D
KW - Barrier height
KW - conductive atomic force microscopy
KW - defects
KW - transition metal dichalcogenides
KW - WS
KW - atomic contacts
UR - http://www.scopus.com/inward/record.url?scp=85059636777&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.8b04636
DO - 10.1021/acs.nanolett.8b04636
M3 - Article
VL - 19
SP - 1190
EP - 1196
JO - Nano letters
JF - Nano letters
SN - 1530-6984
IS - 2
ER -