Barrier properties of ALD1,5N thin films

Svetlana Nikolajevna van Nieuwkasteele-Bystrova, J. Holleman, Antonius A.I. Aarnink, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

35 Downloads (Pure)

Abstract

W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barriers in p+/n diodes and capacitors with SiO2 as a dielectric. I-V and C-V, C-t characteristics were measured before and after anneal. The layers exhibit excellent barrier properties against both Cu and Al interaction with silicon. No changes of current and capacitance attributed to a barrier failure were observed after annealing at 400°C. Samples without the barrier showed a drastic change of the I-V characteristics. The composition of the films was W1.5N as determined with RBS, being a mixture of WN and W2N phases The RMS- roughness was as low as 0.5-0.7 nm for a film with a thickness of 25 nm. © 2005 Materials Research Society.
Original languageUndefined
Title of host publicationInternational Conference on Advanced Metallization
Place of PublicationSan Diego, CA - USA
PublisherMaterials Research Society
Pages769-774
Number of pages6
ISBN (Print)978-15589-9814-8
Publication statusPublished - 1 Jun 2005
EventInternational Conference on Advanced Metallization - San Diego, California, USA
Duration: 19 Oct 200421 Oct 2004

Publication series

Name
PublisherMaterials Research Society

Conference

ConferenceInternational Conference on Advanced Metallization
Period19/10/0421/10/04
Other19-21 October 2004

Keywords

  • METIS-219223
  • IR-74237
  • EWI-15532

Cite this