@inproceedings{4f05eb165a4541b7ae209de2d6be1f93,
title = "Barrier properties of ALD1,5N thin films",
abstract = "W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barriers in p+/n diodes and capacitors with SiO2 as a dielectric. I-V and C-V, C-t characteristics were measured before and after anneal. The layers exhibit excellent barrier properties against both Cu and Al interaction with silicon. No changes of current and capacitance attributed to a barrier failure were observed after annealing at 400°C. Samples without the barrier showed a drastic change of the I-V characteristics. The composition of the films was W1.5N as determined with RBS, being a mixture of WN and W2N phases The RMS- roughness was as low as 0.5-0.7 nm for a film with a thickness of 25 nm. {\textcopyright} 2005 Materials Research Society.",
keywords = "METIS-219223, IR-74237, EWI-15532",
author = "{van Nieuwkasteele-Bystrova}, {Svetlana Nikolajevna} and J. Holleman and Aarnink, {Antonius A.I.} and Wolters, {Robertus A.M.}",
year = "2005",
month = jun,
day = "1",
language = "Undefined",
isbn = "978-15589-9814-8",
publisher = "Materials Research Society",
pages = "769--774",
booktitle = "International Conference on Advanced Metallization",
address = "United States",
note = "International Conference on Advanced Metallization ; Conference date: 19-10-2004 Through 21-10-2004",
}