Base-contact proximity effects in bipolar transistors with nitride-spacer technology

Henk van Zeijl, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

NPN-BJT's with spacer separated Al/Si emitter and base contacts are fabricated and characterized. Due to the proximity of the base contact to the emitter-base junction, the base current is increased by two peripheral effects: an increased, but ideal electron current to the base contact and a non-ideal current through a parasitic channel confined under the spacer. The parasitic channel is induced by a positive charge in the silicon nitride spacers that reduces the effective acceptor concentration under the spacer. With the reduction of this concentration, also the associated high-doping effects are reduced.

Original languageEnglish
Title of host publicationProceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005
PublisherIEEE
Pages461-464
Number of pages4
ISBN (Print)0780392035, 9780780392038
DOIs
Publication statusPublished - 1 Dec 2005
Externally publishedYes
Event35th European Solid-State Device Research Conference, ESSDERC 2005 - Grenoble, France
Duration: 12 Sep 200516 Sep 2005
Conference number: 35

Conference

Conference35th European Solid-State Device Research Conference, ESSDERC 2005
Abbreviated titleESSDERC
CountryFrance
CityGrenoble
Period12/09/0516/09/05

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  • Cite this

    van Zeijl, H., & Nanver, L. K. (2005). Base-contact proximity effects in bipolar transistors with nitride-spacer technology. In Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005 (pp. 461-464). [1546684] IEEE. https://doi.org/10.1109/ESSDER.2005.1546684