Base-contact proximity effects in bipolar transistors with nitride-spacer technology

Henk van Zeijl; Lis K. Nanver

doi:10.1109/ESSDER.2005.1546684

Base-contact proximity effects in bipolar transistors with nitride-spacer technology

Henk van Zeijl
, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

NPN-BJT's with spacer separated Al/Si emitter and base contacts are fabricated and characterized. Due to the proximity of the base contact to the emitter-base junction, the base current is increased by two peripheral effects: an increased, but ideal electron current to the base contact and a non-ideal current through a parasitic channel confined under the spacer. The parasitic channel is induced by a positive charge in the silicon nitride spacers that reduces the effective acceptor concentration under the spacer. With the reduction of this concentration, also the associated high-doping effects are reduced.

Original language	English
Title of host publication	Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005
Publisher	IEEE
Pages	461-464
Number of pages	4
ISBN (Print)	0780392035, 9780780392038
DOIs	https://doi.org/10.1109/ESSDER.2005.1546684
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	35th European Solid-State Device Research Conference, ESSDERC 2005 - Grenoble, France Duration: 12 Sept 2005 → 16 Sept 2005 Conference number: 35

Conference

Conference	35th European Solid-State Device Research Conference, ESSDERC 2005
Abbreviated title	ESSDERC
Country/Territory	France
City	Grenoble
Period	12/09/05 → 16/09/05

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10.1109/ESSDER.2005.1546684

Cite this

@inproceedings{3442e108337a4103aac7e3dfd97ff48c,

title = "Base-contact proximity effects in bipolar transistors with nitride-spacer technology",

abstract = "NPN-BJT's with spacer separated Al/Si emitter and base contacts are fabricated and characterized. Due to the proximity of the base contact to the emitter-base junction, the base current is increased by two peripheral effects: an increased, but ideal electron current to the base contact and a non-ideal current through a parasitic channel confined under the spacer. The parasitic channel is induced by a positive charge in the silicon nitride spacers that reduces the effective acceptor concentration under the spacer. With the reduction of this concentration, also the associated high-doping effects are reduced.",

author = "\{van Zeijl\}, Henk and Nanver, \{Lis K.\}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/ESSDER.2005.1546684",

language = "English",

isbn = "0780392035",

pages = "461--464",

booktitle = "Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005",

publisher = "IEEE",

address = "United States",

note = "35th European Solid-State Device Research Conference, ESSDERC 2005, ESSDERC ; Conference date: 12-09-2005 Through 16-09-2005",

}

van Zeijl, H & Nanver, LK 2005, Base-contact proximity effects in bipolar transistors with nitride-spacer technology. in Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005., 1546684, IEEE, pp. 461-464, 35th European Solid-State Device Research Conference, ESSDERC 2005, Grenoble, France, 12/09/05. https://doi.org/10.1109/ESSDER.2005.1546684

TY - GEN

T1 - Base-contact proximity effects in bipolar transistors with nitride-spacer technology

AU - van Zeijl, Henk

AU - Nanver, Lis K.

N1 - Conference code: 35

PY - 2005/12/1

Y1 - 2005/12/1

N2 - NPN-BJT's with spacer separated Al/Si emitter and base contacts are fabricated and characterized. Due to the proximity of the base contact to the emitter-base junction, the base current is increased by two peripheral effects: an increased, but ideal electron current to the base contact and a non-ideal current through a parasitic channel confined under the spacer. The parasitic channel is induced by a positive charge in the silicon nitride spacers that reduces the effective acceptor concentration under the spacer. With the reduction of this concentration, also the associated high-doping effects are reduced.

AB - NPN-BJT's with spacer separated Al/Si emitter and base contacts are fabricated and characterized. Due to the proximity of the base contact to the emitter-base junction, the base current is increased by two peripheral effects: an increased, but ideal electron current to the base contact and a non-ideal current through a parasitic channel confined under the spacer. The parasitic channel is induced by a positive charge in the silicon nitride spacers that reduces the effective acceptor concentration under the spacer. With the reduction of this concentration, also the associated high-doping effects are reduced.

UR - https://www.scopus.com/pages/publications/33751407186

U2 - 10.1109/ESSDER.2005.1546684

DO - 10.1109/ESSDER.2005.1546684

M3 - Conference contribution

AN - SCOPUS:33751407186

SN - 0780392035

SN - 9780780392038

SP - 461

EP - 464

BT - Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005

PB - IEEE

T2 - 35th European Solid-State Device Research Conference, ESSDERC 2005

Y2 - 12 September 2005 through 16 September 2005

ER -

Base-contact proximity effects in bipolar transistors with nitride-spacer technology

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