Bias dependent specic contact resistance of phase change material to metal contacts

Deepu Roy, Micha in 't Zandt, Robertus A.M. Wolters

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    Abstract

    Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with voltage bias for doped Sb2Te to TiW metal electrodes. These data are reported for both the amorphous and the crystalline state of the PCM.
    Original languageUndefined
    Title of host publicationProceedings of STW.ICT Conference 2010
    Place of PublicationUtrecht
    PublisherSTW
    Pages147-149
    Number of pages3
    ISBN (Print)978-90-73461-67-3
    Publication statusPublished - 18 Nov 2010
    Event2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands
    Duration: 18 Nov 201019 Nov 2010
    https://www.elis.ugent.be/en/project/og/cfp/2558

    Publication series

    Name
    PublisherTechnology Foundation, STW

    Conference

    Conference2010 STW.ICT Conference on Research in Information and Communication Technology
    Abbreviated titleSTW.ICT 2010
    CountryNetherlands
    CityVeldhoven
    Period18/11/1019/11/10
    Internet address

    Keywords

    • METIS-276388
    • IR-76307
    • specic contact resistance
    • EWI-19748
    • PCM
    • Cross Bridge Kelvin Resistor(CBKR)
    • bias dependence

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