Abstract
Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with voltage bias for doped Sb2Te to TiW metal electrodes. These data are reported for both the amorphous and the crystalline state of the PCM.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of STW.ICT Conference 2010 |
| Place of Publication | Utrecht |
| Publisher | STW |
| Pages | 147-149 |
| Number of pages | 3 |
| ISBN (Print) | 978-90-73461-67-3 |
| Publication status | Published - 18 Nov 2010 |
| Event | 2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands Duration: 18 Nov 2010 → 19 Nov 2010 https://www.elis.ugent.be/en/project/og/cfp/2558 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation, STW |
Conference
| Conference | 2010 STW.ICT Conference on Research in Information and Communication Technology |
|---|---|
| Abbreviated title | STW.ICT 2010 |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 18/11/10 → 19/11/10 |
| Internet address |
Keywords
- METIS-276388
- IR-76307
- specic contact resistance
- EWI-19748
- PCM
- Cross Bridge Kelvin Resistor(CBKR)
- bias dependence