BiCMOS technology improvements for microwave application

W.D. van Noort, A. Rodriguez, S. HongJiang, F. Zaato, N. Zhang, T. Nesheiwat, F. Neuilly, J. Melai, E. Hijzen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    44 Citations (Scopus)
    214 Downloads (Pure)


    The third generation of NXP 0.25 μm SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of −60 dB at 10 GHz.
    Original languageUndefined
    Title of host publicationProceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008).
    Place of PublicationPiscataway
    PublisherIEEE Computer Society
    Number of pages4
    ISBN (Print)978-1-4244-2725-3
    Publication statusPublished - 13 Oct 2008
    Event2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008 - Portola Plaza Hotel, Monterey, United States
    Duration: 13 Oct 200816 Oct 2008

    Publication series

    PublisherIEEE Computer Society Press
    ISSN (Print)1088-9299


    Conference2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008
    Abbreviated titleBCTM 2008
    CountryUnited States


    • SC-RID: Radiation Imaging detectors
    • METIS-255443
    • IR-65297
    • EWI-14875

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