The third generation of NXP 0.25 μm SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of −60 dB at 10 GHz.
|Publisher||IEEE Computer Society Press|
|Conference||2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008|
|Abbreviated title||BCTM 2008|
|Period||13/10/08 → 16/10/08|
- SC-RID: Radiation Imaging detectors