Binding and diffusion of a Si adatom on the Si(100) surface

G. Brocks*, P. J. Kelly, R. Car

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

263 Citations (Scopus)
21 Downloads (Pure)

Abstract

The binding sites for adsorption of a single Si atom on the reconstructed Si(100) surface are identified using first-principles total-energy calculations. We establish several saddle points for the migration of the adatom by mapping out the total energy as a function of its position on the surface. For the diffusion parallel to the dimer rows on the surface, we find an activation energy of 0.6 eV; for diffusion perpendicular to the rows, the activation energy is 1.0 eV. One-dimensional hopping motion of individual adatoms should be observable by scanning tunneling microscopy at moderately low temperatures.

Original languageEnglish
Pages (from-to)1729-1732
Number of pages4
JournalPhysical review letters
Volume66
Issue number13
DOIs
Publication statusPublished - 1 Jan 1991
Externally publishedYes

Fingerprint Dive into the research topics of 'Binding and diffusion of a Si adatom on the Si(100) surface'. Together they form a unique fingerprint.

Cite this