Abstract
A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an emitter contact on the donor layer, and a collector terminal forms a collector contact on the donor layer. A base terminal is electrically conductively connected with the high-mobility layer. The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
Original language | Undefined |
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Patent number | US 9,306,017 B2 |
Priority date | 5/04/16 |
Publication status | Published - 5 Apr 2016 |