Bipolar transistor with lateral emitter and collector and method of production

Raymond Josephus Engelbart Hueting (Inventor), Leon C.M. van den Oever (Inventor)

    Research output: Patent

    5 Downloads (Pure)

    Abstract

    A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an emitter contact on the donor layer, and a collector terminal forms a collector contact on the donor layer. A base terminal is electrically conductively connected with the high-mobility layer. The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
    Original languageUndefined
    Patent numberUS 9,306,017 B2
    Priority date5/04/16
    Publication statusPublished - 5 Apr 2016

    Cite this

    Hueting, R. J. E., & van den Oever, L. C. M. (2016). Bipolar transistor with lateral emitter and collector and method of production. (Patent No. US 9,306,017 B2).