Bipolar transistor with lateral emitter and collector and method of production

Raymond Josephus Engelbart Hueting (Inventor), Leon C.M. van den Oever (Inventor)

    Research output: Patent

    24 Downloads (Pure)


    A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an emitter contact on the donor layer, and a collector terminal forms a collector contact on the donor layer. A base terminal is electrically conductively connected with the high-mobility layer. The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
    Original languageUndefined
    Patent numberUS 9,306,017 B2
    Priority date5/04/16
    Publication statusPublished - 5 Apr 2016

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