Black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches

Henricus V. Jansen, Meint J. de Boer, Johannes Faas Burger, R. Legtenberg, Michael Curt Elwenspoek

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Abstract

Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher (RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.
Original languageEnglish
Pages (from-to)475-480
Number of pages6
JournalMicroelectronic engineering
Volume27
Issue number27
DOIs
Publication statusPublished - Feb 1995

Keywords

  • METIS-111574
  • IR-14376
  • EWI-13882

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