Abstract
The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 /spl mu/m thick silicon with glass tubes having outer diameter of 6 mm and with wall thickness 2 mm, is more than 60 bars after annealing at a temperature of 800/spl deg/C.
Original language | Undefined |
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Title of host publication | The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. |
Place of Publication | Los Alamitos |
Publisher | IEEE |
Pages | 936-939 |
Number of pages | 4 |
ISBN (Print) | 0-7803-8994-8 |
DOIs | |
Publication status | Published - 5 Jun 2005 |
Event | 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005 Conference number: 13 |
Publication series
Name | Solid-State Sensors, Actuators and Microsystems |
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Publisher | IEEE Computer Society |
Number | 05TH8791 |
Volume | 1 |
Conference
Conference | 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 |
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Abbreviated title | TRANSDUCERS |
Country/Territory | Korea, Republic of |
City | Seoul |
Period | 5/06/05 → 9/06/05 |
Keywords
- EWI-9989
- IR-52563
- METIS-224176