Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)

I. Fazal, Johan W. Berenschot, J.H. de Boer, Henricus V. Jansen, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
148 Downloads (Pure)

Abstract

The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 /spl mu/m thick silicon with glass tubes having outer diameter of 6 mm and with wall thickness 2 mm, is more than 60 bars after annealing at a temperature of 800/spl deg/C.
Original languageUndefined
Title of host publicationThe 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.
Place of PublicationLos Alamitos
PublisherIEEE
Pages936-939
Number of pages4
ISBN (Print)0-7803-8994-8
DOIs
Publication statusPublished - 5 Jun 2005
Event13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of
Duration: 5 Jun 20059 Jun 2005
Conference number: 13

Publication series

NameSolid-State Sensors, Actuators and Microsystems
PublisherIEEE Computer Society
Number05TH8791
Volume1

Conference

Conference13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
Abbreviated titleTRANSDUCERS
CountryKorea, Republic of
CitySeoul
Period5/06/059/06/05

Keywords

  • EWI-9989
  • IR-52563
  • METIS-224176

Cite this

Fazal, I., Berenschot, J. W., de Boer, J. H., Jansen, H. V., & Elwenspoek, M. C. (2005). Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects). In The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. (pp. 936-939). (Solid-State Sensors, Actuators and Microsystems; Vol. 1, No. 05TH8791). Los Alamitos: IEEE. https://doi.org/10.1109/SENSOR.2005.1496572
Fazal, I. ; Berenschot, Johan W. ; de Boer, J.H. ; Jansen, Henricus V. ; Elwenspoek, Michael Curt. / Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects). The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.. Los Alamitos : IEEE, 2005. pp. 936-939 (Solid-State Sensors, Actuators and Microsystems; 05TH8791).
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title = "Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)",
abstract = "The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 /spl mu/m thick silicon with glass tubes having outer diameter of 6 mm and with wall thickness 2 mm, is more than 60 bars after annealing at a temperature of 800/spl deg/C.",
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author = "I. Fazal and Berenschot, {Johan W.} and {de Boer}, J.H. and Jansen, {Henricus V.} and Elwenspoek, {Michael Curt}",
year = "2005",
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series = "Solid-State Sensors, Actuators and Microsystems",
publisher = "IEEE",
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Fazal, I, Berenschot, JW, de Boer, JH, Jansen, HV & Elwenspoek, MC 2005, Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects). in The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.. Solid-State Sensors, Actuators and Microsystems, no. 05TH8791, vol. 1, IEEE, Los Alamitos, pp. 936-939, 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1496572

Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects). / Fazal, I.; Berenschot, Johan W.; de Boer, J.H.; Jansen, Henricus V.; Elwenspoek, Michael Curt.

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.. Los Alamitos : IEEE, 2005. p. 936-939 (Solid-State Sensors, Actuators and Microsystems; Vol. 1, No. 05TH8791).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)

AU - Fazal, I.

AU - Berenschot, Johan W.

AU - de Boer, J.H.

AU - Jansen, Henricus V.

AU - Elwenspoek, Michael Curt

PY - 2005/6/5

Y1 - 2005/6/5

N2 - The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 /spl mu/m thick silicon with glass tubes having outer diameter of 6 mm and with wall thickness 2 mm, is more than 60 bars after annealing at a temperature of 800/spl deg/C.

AB - The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 /spl mu/m thick silicon with glass tubes having outer diameter of 6 mm and with wall thickness 2 mm, is more than 60 bars after annealing at a temperature of 800/spl deg/C.

KW - EWI-9989

KW - IR-52563

KW - METIS-224176

U2 - 10.1109/SENSOR.2005.1496572

DO - 10.1109/SENSOR.2005.1496572

M3 - Conference contribution

SN - 0-7803-8994-8

T3 - Solid-State Sensors, Actuators and Microsystems

SP - 936

EP - 939

BT - The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.

PB - IEEE

CY - Los Alamitos

ER -

Fazal I, Berenschot JW, de Boer JH, Jansen HV, Elwenspoek MC. Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects). In The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.. Los Alamitos: IEEE. 2005. p. 936-939. (Solid-State Sensors, Actuators and Microsystems; 05TH8791). https://doi.org/10.1109/SENSOR.2005.1496572