Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

S. Conesa-Boj, A. Li, S. Koelling, M. Brauns, J. Ridderbos, T. T. Nguyen, M.A. Verheijen, P.M. Koenraad, F. A. Zwanenburg, Erik P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)
40 Downloads (Pure)
Original languageEnglish
Pages (from-to)2259-2264
JournalNano letters
Volume17
Issue number4
DOIs
Publication statusPublished - Apr 2017

Keywords

  • Nanowire
  • silicon
  • germanium
  • mobility
  • defect-free
  • epitaxy

Cite this

Conesa-Boj, S., Li, A., Koelling, S., Brauns, M., Ridderbos, J., Nguyen, T. T., ... Bakkers, E. P. A. M. (2017). Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires. Nano letters, 17(4), 2259-2264. https://doi.org/10.1021/acs.nanolett.6b04891