Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

S. Conesa-Boj; A. Li; S. Koelling; M. Brauns; J. Ridderbos; T. T. Nguyen; M.A. Verheijen; P.M. Koenraad; F. A. Zwanenburg; Erik P.A.M. Bakkers

doi:10.1021/acs.nanolett.6b04891

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

S. Conesa-Boj, A. Li, S. Koelling, M. Brauns, J. Ridderbos, T. T. Nguyen, M.A. Verheijen, P.M. Koenraad, F. A. Zwanenburg, Erik P.A.M. Bakkers

University of Twente

Research output: Contribution to journal › Article › Academic › peer-review

25 Citations (Scopus)

40 Downloads (Pure)

Original language	English
Pages (from-to)	2259-2264
Journal	Nano letters
Volume	17
Issue number	4
DOIs	https://doi.org/10.1021/acs.nanolett.6b04891
Publication status	Published - Apr 2017

Keywords

Nanowire
silicon
germanium
mobility
defect-free
epitaxy

Cite this

Conesa-Boj, S., Li, A., Koelling, S., Brauns, M., Ridderbos, J., Nguyen, T. T., ... Bakkers, E. P. A. M. (2017). Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires. Nano letters, 17(4), 2259-2264. https://doi.org/10.1021/acs.nanolett.6b04891

@article{a507e2ebf4984df0b6ffd80eee27044f,

title = "Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires",

keywords = "Nanowire, silicon, germanium, mobility, defect-free, epitaxy",

author = "S. Conesa-Boj and A. Li and S. Koelling and M. Brauns and J. Ridderbos and Nguyen, {T. T.} and M.A. Verheijen and P.M. Koenraad and Zwanenburg, {F. A.} and Bakkers, {Erik P.A.M.}",

year = "2017",

month = "4",

doi = "10.1021/acs.nanolett.6b04891",

language = "English",

volume = "17",

pages = "2259--2264",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "4",

}

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires. / Conesa-Boj, S.; Li, A.; Koelling, S.; Brauns, M.; Ridderbos, J.; Nguyen, T. T.; Verheijen, M.A.; Koenraad, P.M.; Zwanenburg, F. A.; Bakkers, Erik P.A.M.

In: Nano letters, Vol. 17, No. 4, 04.2017, p. 2259-2264.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

AU - Conesa-Boj, S.

AU - Li, A.

AU - Koelling, S.

AU - Brauns, M.

AU - Ridderbos, J.

AU - Nguyen, T. T.

AU - Verheijen, M.A.

AU - Koenraad, P.M.

AU - Zwanenburg, F. A.

AU - Bakkers, Erik P.A.M.

PY - 2017/4

Y1 - 2017/4

KW - Nanowire

KW - silicon

KW - germanium

KW - mobility

KW - defect-free

KW - epitaxy

U2 - 10.1021/acs.nanolett.6b04891

DO - 10.1021/acs.nanolett.6b04891

M3 - Article

VL - 17

SP - 2259

EP - 2264

JO - Nano letters

JF - Nano letters

SN - 1530-6984

IS - 4

ER -

Access to Document

10.1021/acs.nanolett.6b04891

boostingFinal published version, 5.14 MB

Research Output

Quantum Dots and Superconductivity in Ge-Si Nanowires

Research output: Thesis › PhD Thesis - Research UT, graduation UT

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

Keywords

Cite this

Access to Document

Related content

Research Output

Quantum Dots and Superconductivity in Ge-Si Nanowires