Boosting the boron dopant level in monolayer doping by carboranes

Liang Ye, Arántzazu González-Campo, Rosario Nunez, Machiel P. de Jong, Tibor Kudernac, Wilfred G. van der Wiel, Jurriaan Huskens*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

28 Citations (Scopus)


Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions.
Original languageEnglish
Pages (from-to)27357-27361
Number of pages5
JournalACS applied materials & interfaces
Issue number49
Publication statusPublished - 16 Dec 2015


  • Hydrosilylation
  • Silicon doping
  • Carboranes
  • Monolayer doping
  • Interfaces
  • 2023 OA procedure


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