Boosting the boron dopant level in monolayer doping by carboranes

Liang Ye, Liang Ye, A. Gonzalez Campo, Arantzazu Gonzalez-Campos, Rosario Nunez, Machiel Pieter de Jong, Tibor Kudernac, Wilfred Gerard van der Wiel, Jurriaan Huskens

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)

Abstract

Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions.
Original languageUndefined
Pages (from-to)27357-27361
Number of pages5
JournalACS applied materials & interfaces
Volume7
Issue number49
DOIs
Publication statusPublished - 16 Dec 2015

Keywords

  • EWI-27626
  • METIS-314382
  • hydrosilylation
  • silicon doping
  • carboranes
  • Monolayer doping
  • IR-100085
  • Interfaces

Cite this

Ye, Liang ; Ye, Liang ; Gonzalez Campo, A. ; Gonzalez-Campos, Arantzazu ; Nunez, Rosario ; de Jong, Machiel Pieter ; Kudernac, Tibor ; van der Wiel, Wilfred Gerard ; Huskens, Jurriaan. / Boosting the boron dopant level in monolayer doping by carboranes. In: ACS applied materials & interfaces. 2015 ; Vol. 7, No. 49. pp. 27357-27361.
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abstract = "Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions.",
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Boosting the boron dopant level in monolayer doping by carboranes. / Ye, Liang; Ye, Liang; Gonzalez Campo, A.; Gonzalez-Campos, Arantzazu; Nunez, Rosario; de Jong, Machiel Pieter; Kudernac, Tibor; van der Wiel, Wilfred Gerard; Huskens, Jurriaan.

In: ACS applied materials & interfaces, Vol. 7, No. 49, 16.12.2015, p. 27357-27361.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Boosting the boron dopant level in monolayer doping by carboranes

AU - Ye, Liang

AU - Ye, Liang

AU - Gonzalez Campo, A.

AU - Gonzalez-Campos, Arantzazu

AU - Nunez, Rosario

AU - de Jong, Machiel Pieter

AU - Kudernac, Tibor

AU - van der Wiel, Wilfred Gerard

AU - Huskens, Jurriaan

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PY - 2015/12/16

Y1 - 2015/12/16

N2 - Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions.

AB - Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions.

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