Bottom-Up Single-Electron Transistors

Ksenia S. Makarenko, Zhihua Liu, Michel P. de Jong, Floris A. Zwanenburg, Jurriaan Huskens, Wilfred G. van der Wiel

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Abstract

As the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom-up approach for the fabrication of high-quality single-electron transistors (SETs) that can easily be contacted electrically in a controllable manner is developed. This approach employs the self-assembly of Au nanoparticles forming the SETs, and Au nanorods forming the leads to macroscopic electrodes, thus bridging the gap between the nano- and microscale. Low-temperature electron-transport measurements reveal exemplary single-electron tunneling characteristics. SET behavior can be significantly changed, post-fabrication, using molecular exchange of the tunnel barriers, demonstrating the tunability of the assemblies. These results form a promising proof of principle for the versatility of bottom-up nanoelectronics, and toward controlled fabrication of nanoelectronic devices.
Original languageEnglish
Article number1702920
JournalAdvanced materials
Volume29
Issue number42
DOIs
Publication statusPublished - 13 Nov 2017

Keywords

  • bottom-up fabrication
  • Coulomb blockade
  • self-assembly
  • single-electron transistors

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