Abstract
As the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom-up approach for the fabrication of high-quality single-electron transistors (SETs) that can easily be contacted electrically in a controllable manner is developed. This approach employs the self-assembly of Au nanoparticles forming the SETs, and Au nanorods forming the leads to macroscopic electrodes, thus bridging the gap between the nano- and microscale. Low-temperature electron-transport measurements reveal exemplary single-electron tunneling characteristics. SET behavior can be significantly changed, post-fabrication, using molecular exchange of the tunnel barriers, demonstrating the tunability of the assemblies. These results form a promising proof of principle for the versatility of bottom-up nanoelectronics, and toward controlled fabrication of nanoelectronic devices.
Original language | English |
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Article number | 1702920 |
Journal | Advanced materials |
Volume | 29 |
Issue number | 42 |
DOIs | |
Publication status | Published - 13 Nov 2017 |
Keywords
- Bottom-up fabrication
- Coulomb blockade
- Self-assembly
- Single-electron transistors
- 22/4 OA procedure