B/P Doping in application of silicon oxynitride based integrated optics

F. Sun, M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    71 Downloads (Pure)

    Abstract

    In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.
    Original languageEnglish
    Title of host publicationLasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
    Place of PublicationPiscataway
    PublisherIEEE
    PagesCE5.1 TUE
    Number of pages1
    ISBN (Print)978-1-4244-4079-5
    DOIs
    Publication statusPublished - 7 Aug 2009
    Event11th European Quantum Electronics Conference, EQEC 2009 - Munich, Germany
    Duration: 14 Jun 200919 Jun 2009
    Conference number: 11
    http://2009.cleoeurope.org/

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference11th European Quantum Electronics Conference, EQEC 2009
    Abbreviated titleEQEC 2009
    CountryGermany
    CityMunich
    Period14/06/0919/06/09
    Internet address

    Keywords

    • METIS-265812
    • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
    • EWI-17485
    • IR-69970

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