B/P Doping in application of silicon oxynitride based integrated optics

F. Sun; M.G. Hussein; Kerstin Worhoff; G. Sengo; A. Driessen

doi:10.1109/CLEOE-EQEC.2009.5196496

B/P Doping in application of silicon oxynitride based integrated optics

F. Sun, M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

158 Downloads (Pure)

Abstract

In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.

Original language	English
Title of host publication	Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Place of Publication	Piscataway
Publisher	IEEE
Pages	CE5.1 TUE
Number of pages	1
ISBN (Print)	978-1-4244-4079-5
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2009.5196496 https://doi.org/10.1109/CLEOE-EQEC.2009.5196496 - CE5.1 TUE
Publication status	Published - 7 Aug 2009
Event	11th European Quantum Electronics Conference, EQEC 2009 - Munich, Germany Duration: 14 Jun 2009 → 19 Jun 2009 Conference number: 11 http://2009.cleoeurope.org/

Publication series

Name
Publisher	IEEE

Conference

Conference	11th European Quantum Electronics Conference, EQEC 2009
Abbreviated title	EQEC 2009
Country/Territory	Germany
City	Munich
Period	14/06/09 → 19/06/09
Internet address	http://2009.cleoeurope.org/

Keywords

METIS-265812
IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
EWI-17485
IR-69970

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Sun, F., Hussein, M. G., Worhoff, K., Sengo, G., & Driessen, A. (2009). B/P Doping in application of silicon oxynitride based integrated optics. In Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on (pp. CE5.1 TUE). IEEE. https://doi.org/10.1109/CLEOE-EQEC.2009.5196496, https://doi.org/10.1109/CLEOE-EQEC.2009.5196496 - CE5.1 TUE

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title = "B/P Doping in application of silicon oxynitride based integrated optics",

abstract = "In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.",

keywords = "METIS-265812, IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY, EWI-17485, IR-69970",

author = "F. Sun and M.G. Hussein and Kerstin Worhoff and G. Sengo and A. Driessen",

note = "10.1109/CLEOE-EQEC.2009.5196496 - CE5.1 TUE ; 11th European Quantum Electronics Conference, EQEC 2009, EQEC 2009 ; Conference date: 14-06-2009 Through 19-06-2009",

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Sun, F, Hussein, MG, Worhoff, K, Sengo, G & Driessen, A 2009, B/P Doping in application of silicon oxynitride based integrated optics. in Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. IEEE, Piscataway, pp. CE5.1 TUE, 11th European Quantum Electronics Conference, EQEC 2009, Munich, Bavaria, Germany, 14/06/09. https://doi.org/10.1109/CLEOE-EQEC.2009.5196496, https://doi.org/10.1109/CLEOE-EQEC.2009.5196496 - CE5.1 TUE

B/P Doping in application of silicon oxynitride based integrated optics. / Sun, F.; Hussein, M.G.; Worhoff, Kerstin et al.
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. Piscataway: IEEE, 2009. p. CE5.1 TUE.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - B/P Doping in application of silicon oxynitride based integrated optics

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AU - Hussein, M.G.

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AU - Driessen, A.

N1 - Conference code: 11

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N2 - In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.

AB - In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.

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KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

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Sun F, Hussein MG, Worhoff K, Sengo G, Driessen A. B/P Doping in application of silicon oxynitride based integrated optics. In Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. Piscataway: IEEE. 2009. p. CE5.1 TUE doi: 10.1109/CLEOE-EQEC.2009.5196496, 10.1109/CLEOE-EQEC.2009.5196496 - CE5.1 TUE

B/P Doping in application of silicon oxynitride based integrated optics

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