Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography

Viacheslav Medvedev, Andrey Yakshin, Robbert Wilhelmus Elisabeth van de Kruijs, V.M. Krivtsun, A.M. Yakunin, K. Koshelev, Frederik Bijkerk

Research output: Contribution to conferencePosterOther research output

Abstract

The most promi¬sing next generation lithography technology is extreme ultraviolet lithography (EUVL). To fulfill the demands of high productivity, EUVL requires high power EUV radiation sources, with a promising technology for such sources being based on the emission of dense plasmas produced by pulsed CO2 laser radiation at 10.6 μm. However, such plasmas also scatter a significant portion of the incident laser radiation that propagate along with the EUV and reaches the wafer. So solutions are needed that provide high reflectivity in the EUV wavelength range while simultaneously suppressing the IR radiation of the laser. We have developed two multilayer based solutions that simultaneously provide high reflectivity of the EUV radiation and suppression of the CO2 laser. The first solution is a combination of a standard high reflectance EUV Mo/Si multilayer with a reflective grating. First experimental results on the optical response of such a lamellar quarter lambda reflector have been obtained, where the filtering principle is based on suppression of the 0th diffracting order for 10.6 mm radiation, with the energy being diffracted into higher orders, thus eliminating the specular reflection. The first results show 70-times suppression of the IR light at the target wavelength in the specular direction, while the EUV peak reflectance of the multilayer grating is 61% at 13.5 nm. The second solution consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase shift layer of the resonant IR antireflective (AR) coating. Suppression of more than two orders of magnitude at the target wavelength is demonstrated. The currently achieved EUV peak reflectance is about 45% at 13.5 nm
Original languageEnglish
Pages-
Publication statusPublished - 10 Dec 2012
EventNetherlands MicroNanoConference 2012 - Ede/Wageningen, Netherlands
Duration: 10 Dec 201211 Dec 2012

Conference

ConferenceNetherlands MicroNanoConference 2012
CountryNetherlands
CityEde/Wageningen
Period10/12/1211/12/12

Fingerprint

Bragg reflectors
lithography
retarding
reflectance
radiation
wavelengths
gratings
laser beams
coatings
specular reflection
dense plasmas
productivity
radiation sources
reflectors
lasers
pulsed lasers
phase shift
wafers
energy

Keywords

  • METIS-298890

Cite this

Medvedev, V., Yakshin, A., van de Kruijs, R. W. E., Krivtsun, V. M., Yakunin, A. M., Koshelev, K., & Bijkerk, F. (2012). Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography. -. Poster session presented at Netherlands MicroNanoConference 2012, Ede/Wageningen, Netherlands.
Medvedev, Viacheslav ; Yakshin, Andrey ; van de Kruijs, Robbert Wilhelmus Elisabeth ; Krivtsun, V.M. ; Yakunin, A.M. ; Koshelev, K. ; Bijkerk, Frederik. / Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography. Poster session presented at Netherlands MicroNanoConference 2012, Ede/Wageningen, Netherlands.
@conference{c25c2550515341a086a82e0a655efbee,
title = "Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography",
abstract = "The most promi¬sing next generation lithography technology is extreme ultraviolet lithography (EUVL). To fulfill the demands of high productivity, EUVL requires high power EUV radiation sources, with a promising technology for such sources being based on the emission of dense plasmas produced by pulsed CO2 laser radiation at 10.6 μm. However, such plasmas also scatter a significant portion of the incident laser radiation that propagate along with the EUV and reaches the wafer. So solutions are needed that provide high reflectivity in the EUV wavelength range while simultaneously suppressing the IR radiation of the laser. We have developed two multilayer based solutions that simultaneously provide high reflectivity of the EUV radiation and suppression of the CO2 laser. The first solution is a combination of a standard high reflectance EUV Mo/Si multilayer with a reflective grating. First experimental results on the optical response of such a lamellar quarter lambda reflector have been obtained, where the filtering principle is based on suppression of the 0th diffracting order for 10.6 mm radiation, with the energy being diffracted into higher orders, thus eliminating the specular reflection. The first results show 70-times suppression of the IR light at the target wavelength in the specular direction, while the EUV peak reflectance of the multilayer grating is 61{\%} at 13.5 nm. The second solution consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase shift layer of the resonant IR antireflective (AR) coating. Suppression of more than two orders of magnitude at the target wavelength is demonstrated. The currently achieved EUV peak reflectance is about 45{\%} at 13.5 nm",
keywords = "METIS-298890",
author = "Viacheslav Medvedev and Andrey Yakshin and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and V.M. Krivtsun and A.M. Yakunin and K. Koshelev and Frederik Bijkerk",
year = "2012",
month = "12",
day = "10",
language = "English",
pages = "--",
note = "Netherlands MicroNanoConference 2012 ; Conference date: 10-12-2012 Through 11-12-2012",

}

Medvedev, V, Yakshin, A, van de Kruijs, RWE, Krivtsun, VM, Yakunin, AM, Koshelev, K & Bijkerk, F 2012, 'Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography' Netherlands MicroNanoConference 2012, Ede/Wageningen, Netherlands, 10/12/12 - 11/12/12, pp. -.

Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography. / Medvedev, Viacheslav; Yakshin, Andrey; van de Kruijs, Robbert Wilhelmus Elisabeth; Krivtsun, V.M.; Yakunin, A.M.; Koshelev, K.; Bijkerk, Frederik.

2012. - Poster session presented at Netherlands MicroNanoConference 2012, Ede/Wageningen, Netherlands.

Research output: Contribution to conferencePosterOther research output

TY - CONF

T1 - Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography

AU - Medvedev, Viacheslav

AU - Yakshin, Andrey

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Krivtsun, V.M.

AU - Yakunin, A.M.

AU - Koshelev, K.

AU - Bijkerk, Frederik

PY - 2012/12/10

Y1 - 2012/12/10

N2 - The most promi¬sing next generation lithography technology is extreme ultraviolet lithography (EUVL). To fulfill the demands of high productivity, EUVL requires high power EUV radiation sources, with a promising technology for such sources being based on the emission of dense plasmas produced by pulsed CO2 laser radiation at 10.6 μm. However, such plasmas also scatter a significant portion of the incident laser radiation that propagate along with the EUV and reaches the wafer. So solutions are needed that provide high reflectivity in the EUV wavelength range while simultaneously suppressing the IR radiation of the laser. We have developed two multilayer based solutions that simultaneously provide high reflectivity of the EUV radiation and suppression of the CO2 laser. The first solution is a combination of a standard high reflectance EUV Mo/Si multilayer with a reflective grating. First experimental results on the optical response of such a lamellar quarter lambda reflector have been obtained, where the filtering principle is based on suppression of the 0th diffracting order for 10.6 mm radiation, with the energy being diffracted into higher orders, thus eliminating the specular reflection. The first results show 70-times suppression of the IR light at the target wavelength in the specular direction, while the EUV peak reflectance of the multilayer grating is 61% at 13.5 nm. The second solution consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase shift layer of the resonant IR antireflective (AR) coating. Suppression of more than two orders of magnitude at the target wavelength is demonstrated. The currently achieved EUV peak reflectance is about 45% at 13.5 nm

AB - The most promi¬sing next generation lithography technology is extreme ultraviolet lithography (EUVL). To fulfill the demands of high productivity, EUVL requires high power EUV radiation sources, with a promising technology for such sources being based on the emission of dense plasmas produced by pulsed CO2 laser radiation at 10.6 μm. However, such plasmas also scatter a significant portion of the incident laser radiation that propagate along with the EUV and reaches the wafer. So solutions are needed that provide high reflectivity in the EUV wavelength range while simultaneously suppressing the IR radiation of the laser. We have developed two multilayer based solutions that simultaneously provide high reflectivity of the EUV radiation and suppression of the CO2 laser. The first solution is a combination of a standard high reflectance EUV Mo/Si multilayer with a reflective grating. First experimental results on the optical response of such a lamellar quarter lambda reflector have been obtained, where the filtering principle is based on suppression of the 0th diffracting order for 10.6 mm radiation, with the energy being diffracted into higher orders, thus eliminating the specular reflection. The first results show 70-times suppression of the IR light at the target wavelength in the specular direction, while the EUV peak reflectance of the multilayer grating is 61% at 13.5 nm. The second solution consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase shift layer of the resonant IR antireflective (AR) coating. Suppression of more than two orders of magnitude at the target wavelength is demonstrated. The currently achieved EUV peak reflectance is about 45% at 13.5 nm

KW - METIS-298890

M3 - Poster

SP - -

ER -

Medvedev V, Yakshin A, van de Kruijs RWE, Krivtsun VM, Yakunin AM, Koshelev K et al. Bragg reflectors with IR suppression for Extreme Ultraviolet Lithography. 2012. Poster session presented at Netherlands MicroNanoConference 2012, Ede/Wageningen, Netherlands.