Breakdown and recovery of thin gate oxides

Twan Bearda, Paul W. Mertens, Marc M. Heyns, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
    Original languageEnglish
    Title of host publicationProceedings of the 30th European Solid-State Device research Conference
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages116-119
    ISBN (Print)2-86332-248-6
    DOIs
    Publication statusPublished - 1 Jan 2000
    Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
    Duration: 11 Sep 200013 Sep 2000
    Conference number: 30

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference30th European Solid-State Device Research Conference, ESSDERC 2000
    Abbreviated titleESSDERC 2000
    CountryIreland
    CityCork
    Period11/09/0013/09/00

    Keywords

    • METIS-113889
    • IR-17004

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