Breakdown and recovery of thin gate oxides

Twan Bearda; Paul W. Mertens; Marc M. Heyns; P.H. Woerlee; Hans Wallinga

doi:10.1109/ESSDERC.2000.194728

Breakdown and recovery of thin gate oxides

Twan Bearda, Paul W. Mertens, Marc M. Heyns, P.H. Woerlee, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.

Original language	English
Title of host publication	Proceedings of the 30th European Solid-State Device research Conference
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	116-119
ISBN (Print)	2-86332-248-6
DOIs	https://doi.org/10.1109/ESSDERC.2000.194728
Publication status	Published - 1 Jan 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sep 2000 → 13 Sep 2000 Conference number: 30

Publication series

Name
Publisher	IEEE

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated title	ESSDERC 2000
Country	Ireland
City	Cork
Period	11/09/00 → 13/09/00

Keywords

METIS-113889
IR-17004

Access to Document

10.1109/ESSDERC.2000.194728

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Cite this

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title = "Breakdown and recovery of thin gate oxides",

abstract = "Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.",

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author = "Twan Bearda and Mertens, {Paul W.} and Heyns, {Marc M.} and P.H. Woerlee and Hans Wallinga",

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doi = "10.1109/ESSDERC.2000.194728",

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T1 - Breakdown and recovery of thin gate oxides

AU - Bearda, Twan

AU - Mertens, Paul W.

AU - Heyns, Marc M.

AU - Woerlee, P.H.

AU - Wallinga, Hans

N1 - Conference code: 30

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.

AB - Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.

KW - METIS-113889

KW - IR-17004

U2 - 10.1109/ESSDERC.2000.194728

DO - 10.1109/ESSDERC.2000.194728

M3 - Conference contribution

SN - 2-86332-248-6

SP - 116

EP - 119

BT - Proceedings of the 30th European Solid-State Device research Conference

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -