Abstract
Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed
within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
Original language | English |
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Title of host publication | Proceedings of the 30th European Solid-State Device research Conference |
Place of Publication | Piscataway, NJ, USA |
Publisher | IEEE |
Pages | 116-119 |
ISBN (Print) | 2-86332-248-6 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Event | 30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sep 2000 → 13 Sep 2000 Conference number: 30 |
Publication series
Name | |
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Publisher | IEEE |
Conference
Conference | 30th European Solid-State Device Research Conference, ESSDERC 2000 |
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Abbreviated title | ESSDERC 2000 |
Country/Territory | Ireland |
City | Cork |
Period | 11/09/00 → 13/09/00 |
Keywords
- METIS-113889
- IR-17004